M81706AFP

MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81706AFP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ..................... +120mA/–250mA (min) ¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. 1. VCC 2. HIN 3. LIN 4. GND 8. VB 7. HO 6. VS 5. LO Outline:8P2S BLOCK DIAGRAM 8 VB VREG HV LEVEL SHIFT UV DETECT FILTER RQ INTER LOCK R S 7 HIN 2 VREG/VCC LEVEL SHIFT HO PULSE GEN 6 VS VCC UV DETECT FILTER VREG/VCC LEVEL SHIFT 1 LIN 3 DELAY 5 LO 4 GND Aug. 2009 1 MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 625 VB–25 ~ VB+0.5 VBS = VB–VS –0.5 ~ 25 VS–0.5 ~ VB+0.5 –0.5 ~ 25 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 0.6 6.0 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 Unit V V V V V V V W mW/°C °C/W °C °C °C HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage HIN, LIN Test conditions Min. VS+10 0 10 VS 10 0 0 Limits Typ. — — — — — — — Max. VS+20 500 20 VB 20 VCC VCC Unit V V V V V V V VBS = VB–VS * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 0.7 Package Power Dissipation Pd (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvt VBSuvh tVBSuv VCCuvr VCCuvt VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Trip Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off VO = 0V, VIN = 5V, PW < 10µs VO = 15V, VIN = 0V, PW < 10µs IO = –20mA, ROH = (VOH–VO)/IO IO = 20mA, ROL = VO/IO CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND |tdLH(HO)–tdLH(LO)| |tdHL(HO)–tdHL(LO)| Test conditions VB = VS = 600V HIN = LIN = 0V HIN = LIN = 0V IO = –20mA, LO, HO IO = 20mA, LO, HO HIN, LIN HIN, LIN VIN = 5V VIN = 0V Min. — — 0.2 13.6 — 2.7 — — — 8.0 7.4 0.5 — 8.0 7.4 0.5 — 120 250 — — — — — — — — — — — — Limits Typ.* — 0.2 0.5 14.2 0.3 — — 5 — 8.9 8.2 0.7 7.5 8.9 8.2 0.7 7.5 200 350 40 15 120 170 130 50 120 170 130 50 0 0 Max. 1.0 0.5 1.0 — 0.6 — 0.8 20 2 9.8 9.0 — — 9.8 9.0 — — — — 70 30 240 280 220 80 240 280 220 80 30 30 Unit µA mA mA V V V V µA µA V V V µs V V V µs mA mA Ω Ω ns ns ns ns ns ns ns ns ns ns * Typ. is not specified. Aug. 2009 3 MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE HIN H →L H →L L→H L→H X X H →L L→H LIN L H L H L H X X VBS UV H H H H L L H H VCC UV H H H H H H L L HO L L H L L L L L LO L H L L L H L L LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, VBS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped Behavioral state Note1 : “L” state of VBS UV, VCC UV means that UV trip voltage. 2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. 3 : X(HIN) : L→H or H→L.X(LIN) : H or L. 4 : Output signal (HO) is triggered by the edge of input signal. HIN HO TIMING DIAGRAM 1. Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. HIN LIN HO LO Aug. 2009 4 MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 2. VCC (VBS) Supply Under Voltage Lockout Timing Diagram If VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal LO becomes “H”. VCC VCCuvt tVCCuv VCCuvh VCCuvr LO LIN It VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal is “H”. VBS(H) LIN(L) VCC VCCuvt tVCCuv VCCuvh VCCuvr HO HIN If VBS supply voltage drops below UV trip voltage (VBSuvt = VBSuvr–VBSuvh) for VBS supply UV filter time, output signal becomes “L”. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. VBSuvh VBSuvt tVBSuv VBSuvr VBS HO HIN Aug. 2009 5 MITSUBISHI SEMICONDUCTORS M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS secondly. In the case of shutting off supply voltage, please shut off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Consideration As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: VS). Therefore, pin insulation space distance should be taken enough. PACKAGE OUTLINE e b2 8 5 HE E e1 Recommended Mount Pad 1 4 F A Symbol A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 G D b e y x M A2 A1 c z Z1 Detail G Detail F Dimension in Millimeters Min Nom Max – – 1.9 0.05 – – – 1.5 – 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 – 1.27 – 5.9 6.2 6.5 0.2 0.4 0.6 – 0.9 – – 0.595 – – – 0.745 – – 0.25 – – 0.1 0° – 10° – 0.76 – – 5.72 – 1.27 – – L1 L I2 Aug. 2009 6