M81709FP

MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81709FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT .................................................... ±2A ¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-16 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. LO GND VCC NC NC VS VB HO 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC GND LIN NC HIN NC NC NC NC:NO CONNECTION Outline:16P2N BLOCK DIAGRAM 7 VB VREG HV LEVEL SHIFT UV DETECT FILTER RQ INTER LOCK R S 8 HIN 12 VREG/VCC LEVEL SHIFT HO PULSE GEN 6 VS VCC UV DETECT FILTER VREG/VCC LEVEL SHIFT 3 LIN 14 DELAY 1 LO 15 2 GND Mar. 2006 MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 VBS = VB–VS –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 0.90 9.0 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 Unit V V V V V V V V/ns W mW/°C °C/W °C °C °C HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage HIN, LIN VB > 10V VBS = VB–VS Test conditions Min. VS+10 –5 10 VS 10 0 0 Limits Typ. — — — — — — — Max. VS+20 500 20 VB 20 VCC VCC Unit V V V V V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 2.0 Package Power Dissipation Pd (W) 1.5 1.0 0.5 0 0 25 50 75 100 125 Temperature Ta (°C) Mar. 2006 MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off VO = 0V, VIN = 5V, PW < 10µs VO = 15V, VIN = 0V, PW < 10µs IO = –200mA, ROH = (VOH–VO)/IO IO = 200mA, ROL = VO/IO CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND |tdLH(HO)–tdLH(LO)| |tdHL(HO)–tdHL(LO)| Test conditions VB = VS = 600V HIN = LIN = 0V HIN = LIN = 0V IO = 0A, LO, HO IO = 0A, LO, HO HIN, LIN HIN, LIN VIN = 5V VIN = 0V Min. — — 0.2 13.8 — 2.1 0.6 — — 8.0 0.3 — 8.0 0.3 — — — — — 100 100 — — 100 100 — — — — Limits Typ.* — 0.2 0.5 14.4 — 3.0 1.5 25 — 8.9 0.7 7.5 8.9 0.7 7.5 2.5 2.5 10 2.5 135 135 20 15 135 135 20 15 — — Max. 1.0 0.5 1.0 — 0.1 4.0 2.0 75 1.0 9.8 — — 9.8 — — — — 13 3.0 170 170 35 25 170 170 35 25 30 30 Unit µA mA mA V V V V µA µA V V µs V V µs A A Ω Ω ns ns ns ns ns ns ns ns ns ns * Typ. is not specified. Mar. 2006 MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE (X: H or L) HIN L L H H X X L H LIN L H L H L H X X VBS UV H H H H L L H H VCC UV H H H H H H L L HO L L H L L L L L LO L H L L L H L L LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, VBS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped Behavioral state Note : “L” state of VBS UV, VCC UV means that UV trip voltage. In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. TIMING DIAGRAM 1.Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. HIN LIN HO LO Mar. 2006 MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes “H”. VCCuvh VCCuvt tVCCuv VCCuvr VCC LO LIN When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output signal HO becomes “H”. VBS(H) LIN(L) VCC VCCuvt tVCCuv VCCuvh VCCuvr HO HIN When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output signal becomes “L”. And then, VBS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until next input signal HIN is “H”. VBSuvh VBSuvt tVBSuv VBSuvr VBS HO HIN Mar. 2006 MITSUBISHI SEMICONDUCTORS M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 3.Allowable Supply Voltage Transient It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, shutting off VBS firstly and shutting off VCC secondly. At the time of starting VCC and VBS, power supply should be increased slowly. If it is increased rapidly, output signal (HO or LO) may be “H”. PACKAGE OUTLINE 16P2N-A EIAJ Package Code SOP16-P-300-1.27 JEDEC Code – Weight(g) 0.2 Lead Material Cu Alloy Plastic 16pin 300mil SOP e b2 16 9 HE E e1 Recommended Mount Pad Symbol 1 8 F A G D A2 b A1 x M e y A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 c z Z1 Detail G Detail F Dimension in Millimeters Min Nom Max – – 2.1 0.2 0.1 0 – – 1.8 0.5 0.4 0.35 0.25 0.2 0.18 10.2 10.1 10.0 5.4 5.3 5.2 – 1.27 – 8.1 7.8 7.5 0.8 0.6 0.4 – 1.25 – – – 0.605 – 0.755 – – – 0.25 0.1 – – 0° – 8° – 0.76 – – 7.62 – – 1.27 – L1 L I2 Mar. 2006