0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
M81713FP

M81713FP

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    M81713FP - HIGH VOLTAGE HALF BRIDGE DRIVER - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
M81713FP 数据手册
MITSUBISHI SEMICONDUCTORS M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81713FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................. ±500mA ¡HALF BRIDGE DRIVER ¡SINGLE INPUT TYPE ¡INTERNALLY SET DEADTIME ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. 1. VCC 2. IN 3. GND 4. LO 8. VB 7. HO 6. VS 5. NC NC:NO CONNECTION Outline:8P2S BLOCK DIAGRAM 8 VB VREG HV LEVEL SHIFT Ponr UV DETECT FILTER INTER LOCK RQ R S 7 HO PULSE GEN IN 2 DEAD TIME VREG/VCC LEVEL SHIFT Ponr UV DETECT FILTER 6 1 VS VCC 4 LO DELAY 3 GND Mar. 2006 MITSUBISHI SEMICONDUCTORS M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 VBS = VB–VS –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 0.55 5.5 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 Unit V V V V V V V V/ns W mW/°C °C/W °C °C °C Ta = 25°C, On Board Ta > 25°C, On Board RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage VB > 10V VBS = VB–VS Test conditions Min. VS+10 –5 10 VS 10 0 0 Limits Typ. — — — — — — — Max. VS+20 500 20 VB 20 VCC VCC Unit V V V V V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 0.7 Package Power Dissipation Pd (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta (°C) Mar. 2006 MITSUBISHI SEMICONDUCTORS M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tDEAD VPonr tPonr(FIL) tdLH tdHL trH tfH trL tfL Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Dead Time LO Turn-Off to HO Turn-On & HO Turn-Off to LO Turn-On Power On Reset Voltage Power On Reset Filter Time Turn-On Propagation Delay Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Rise Time Low Side Turn-Off Fall Time CL = 1000pF between HO-VS, LO-GND CL = 1000pF between HO-VS, LO-GND CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND VO = 0V, PW < 10µs VO = 15V, PW < 10µs IO = –200mA, ROH = (VOH–VO)/IO IO = 200mA, ROL = VO/IO CL = 1000pF between HO-VS, LO-GND Test conditions VB = VS = 600V IN = 0V IN = 0V IO = 0A, LO, HO IO = 0A, LO, HO HIN, LIN HIN, LIN VIN = 5V VIN = 0V Min. — — 0.2 13.8 — 2.1 0.6 — — 8.0 0.5 — 8.0 0.5 — — — — — 0.5 — 300 0.6 0.1 — — — — Limits Typ.* — 0.2 0.5 14.4 — 3.0 1.5 25 — 8.9 0.7 7.5 8.9 0.7 7.5 –500 500 30 12 — — — 0.9 0.15 75 75 75 75 Max. 1.0 0.5 0.75 — 0.1 4.0 2.0 75 1 9.8 — — 9.8 — — — — — — 1.00 6 — 1.2 0.2 180 180 180 180 Unit µA mA mA V V V V µA µA V V µs V V µs mA mA Ω Ω µs V ns µs µs ns ns ns ns * Typ. is not specified. INPUT/OUTPUT TIMING DIAGRAM IN 50% 50% tfL HO trH 90% tfH 90% trL 10% 90% LO 10% tdHL tdLH tDEAD tdHL tdLH 10% 90% 10% tDEAD Mar. 2006 MITSUBISHI SEMICONDUCTORS M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER UV SEQUENCE UV RESET UV TRIP VCC tVCCuv UV RESET UV TRIP VPonr UV TRIP tVBSuv UV RESET UV TRIP VPonr UV TRIP tVCCuv UV RESET VPonr UV RESET VB IN HO LO 1.Input/Output Logic: HO has positive logic with reference to IN. LO has negative logic with reference to IN. 2.Logic During UV (VCC, VBS) Error Error Signal UV error (VCC) UV error (VBS) HO LO LO is locked at “L” level as long as UV error for VCC is detected. HO outputs “L” Level as long as UV error for VCC is detected. After V CC exceeds V CC UV reset level, the lock for LO is HO responds to IN if VCC exceeds VCC UV reset level. removed and responds to IN signal. HO is locked at “L” level as long as UV error for VBS is detected. After V BS exceeds VBS UV reset level, the lock for HO is removed following an “L” state of the IN signal, and then LO is independent of VBS to respond to IN. HO responds to the input. * IF UV error for VCC is detected when HO is in “H” level and the falling speed of VCC is exceeds 0.03V/µs, the off signal for HO might not be transmitted from low side to high side and then HO stays “H”. 3.Allowable Supply Voltage Transient It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, it is recommended to shut off V BS firstly and to shut off VCC secondly. At the time of starting VCC and VBS, power supply should be increased slowly (below 50V/µs). If it is increased rapidly, output signal (HO or LO) may be “H”. Mar. 2006 MITSUBISHI SEMICONDUCTORS M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER Ponr (Power On Reset) SEQUENCE UV RESET UV TRIP VCC tPonr(FIL) UV RESET VB tPonr(FIL) UV RESET UV TRIP VPonr UV TRIP UV TRIP UV RESET UV TRIP VPonr tPonr(FIL) UV RESET UV TRIP VPonr IN HO LO PACKAGE OUTLINE e b2 8 5 HE E e1 Recommended Mount Pad 1 4 F A Symbol A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 G D b e y x M A2 A1 c z Z1 Detail G Detail F Dimension in Millimeters Min Nom Max – – 1.9 0.05 – – – 1.5 – 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 – 1.27 – 5.9 6.2 6.5 0.2 0.4 0.6 – 0.9 – – 0.595 – – – 0.745 – – 0.25 – – 0.1 0° – 10° – 0.76 – – 5.72 – 1.27 – – L1 L I2 Mar. 2006
M81713FP 价格&库存

很抱歉,暂时无法提供与“M81713FP”相匹配的价格&库存,您可以联系我们找货

免费人工找货