M81721FP

MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP PACKAGE PIN CONFIGURATION (TOP VIEW) 24 NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO 1 12 13 APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose. Outline: 24P2Q BLOCK DIAGRAM VB GND UV HPOUT HNOUT1 HNOUT2 Logic Filter VS VCC Vreg HIN Interlock & Noise Filter LIN Pulse Generator VREG Vref VCC CIN Vref + – Protection Logic LPOUT LNOUT1 LNOUT2 VNO Filter FO FO_RST Filter Aug. 2009 1 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage Allowable offset voltage slew rate Package power dissipation Linear derating factor Junction-case thermal resistance Junction temperature Operation temperature Storage temperature Test conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 VCC–24 ~ VCC+0.5 VNO–0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 ~ 1.25 ~ 12.5 ~ 80 –40 ~ 125 –40 ~ 100 –40 ~ 125 Unit V V V V V V V V V V V/ns W mW/°C °C/W °C °C °C VBS = VB–VS HIN, LIN, FO_RST Ta = 25°C, On PCB Ta > 25°C, On PCB RECOMMENDED OPERATING CONDITIONS For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage HIN, LIN, FO_RST Test conditions Min. VS+13.5 –5 13.5 VS 13.5 –0.5 VNO 0 0 0 Limits Typ. VS+15 — 15 — 15 — — — — — Max. VS+20 500 20 VS+20 20 5 VCC VCC VCC 5 Unit V V V V V V V V V V VBS > 13.5V VBS = VB–VS Note: For proper operation, the device should be used within the recommend conditions. THERMAL DERATING FACTOR CHARACTERISTIC 1.4 Package Power Dissipation Pd (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Ambience Temperature (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER TYPICAL CONNECTION DC+ Rboot Dboot VCC 15V HIN MCU/DSP Controller 5V~15V LIN FO_RST VB HPOUT HNOUT1 HNOUT2 RGOFF Cboot VS RGON HOUT Vout DC BUS Voltage RFO Other Phases CFO GND FO M81721FP LPOUT LNOUT1 LNOUT2 CIN VNO RGON LOUT RGOFF Rshunt RCIN CCIN DCNote: If HVIC is working in high noise environment, it is recommended to connect a 1nF ceramic capacitor (CFO) to FO pin. Aug. 2009 3 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL tFilter VHNO2 VLNO2 tVNO2 VOLFO VIHFO VILFO VBSuvr VBSuvt VBSuvh tVBSuv VCIN VPOR IOH IOL1 IOL2 ROH ROL1 ROL2 tdLH(HO) tdHL(HO) tdLH(LO) tdHL(LO) tr tf ∆tdLH ∆tdHL Parameter High side leakage current VBS quiescent supply current VCC quiescent supply current High level output voltage Low level output voltage High level input threshold voltage Low level input threshold voltage High level input bias current Low level input bias current Input signals filter time High side active Miller clamp NMOS input threshold voltage Low side active Miller clamp NMOS input threshold voltage Active Miller clamp NMOS filter time Low level FO output voltage High level FO input threshold voltage Low level FO input threshold voltage VBS supply UV reset voltage VBS supply UV trip voltage VBS supply UV hysteresis voltage VBS supply UV filter time CIN trip voltage POR trip voltage Output high level short circuit pulsed current Output low level short circuit pulsed current Active Miller clamp NMOS output low level short circuit pulsed current Output high level on resistance Output low level on resistance Active Miller clamp NMOS output low level on resistance High side turn-on propagation delay High side turn-off propagation delay Low side turn-on propagation delay Low side turn-off propagation delay Output turn-on rise time Output turn-off fall time Delay matching, high side turn-on and low side turn-off Delay matching, high side turn-off and low side turn-on HPOUT(LPOUT) = 0V, HIN = 5V, PW < 5µs HNOUT1 (LNOUT1) = 15V, LIN = 5V, PW < 5µs HNOUT2 (LNOUT2) = 15V, LIN = 5V, PW < 5µs IO = –1A, ROH = (VOH–VO)/IO IO = 1A, ROL1 = VO/IO IO = 1A, ROL2 = VO/IO HPOUT short to HNOUT1 and HNOUT2, CL = 1nF HPOUT short to HNOUT1 and HNOUT2, CL = 1nF LPOUT short to LNOUT1 and LNOUT2, CL = 1nF LPOUT short to LNOUT1 and LNOUT2, CL = 1nF CL = 1nF CL = 1nF tdLH (HO) -tdHL (LO) tdLH (LO) -tdHL (HO) VBSuvh = VBSuvr–VBSuvt Test conditions VB = VS = 600V HIN = LIN = 0V HIN = LIN = 0V IO = –20mA, HPOUT, LPOUT IO = 20mA, HNOUT1, LNOUT1 HIN, LIN, FO_RST HIN, LIN, FO_RST VIN = 5V VIN = 0V HIN, LIN, FO_RST, FO VIN = 0V VIN = 0V VIN = 0V IFO = 1mA Min. — — — 14.5 — 4.0 — 0.6 –0.01 100 2.0 5.5 — — 4.0 — 10.5 10 0.2 4 0.4 4.5 — — — — — — 0.4 0.35 0.4 0.35 — — — — Limits Typ. — 0.15 0.7 15 0 — — 1 0 200 3.4 7.6 400 — — — 11.3 10.8 0.5 8 0.5 6.5 1 –1 –1 15 15 15 0.8 0.74 0.8 0.74 40 40 60 60 Max. 1.0 0.5 1.5 — 0.5 — 0.6 1.4 — 500 4 8.5 — 0.95 — 0.6 12.1 11.6 0.8 16 0.6 8.5 — — — — — — 1.25 1.2 1.25 1.2 — — — — Unit µA mA mA V V V V mA mA ns V V ns V V V V V V µs V V A A A Ω Ω Ω µs µs µs µs ns ns ns ns Note: Typ is not specified. Aug. 2009 4 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE (Q: Keep previous status) HIN H→L H→L L→H L→H X X X X X X LIN L H L H H L X X L H FO_RST L L L L X X X X L L CIN L L L L H H X X L L FO (Input) – – – – – – L – – – VBS/UV VCC/POR H H H H X X X X L L H H H H H H H L H H HOUT L L H Q L Q L L L L LOUT L H L Q L Q L L L H FO (Output) H H H H L H L H H H Behavioral status Interlock active CIN tripping when LIN = H CIN not tripping when LIN = L Output shuts down when FO = L VCC power reset VBS power reset VBS power reset is tripping when LIN = H Note1 : “L” status of VBS/UV indicates a high side UV condition; “L” status of VCC/POR indicates a VCC power reset condition. Note2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HOUT and LOUT) keep previous status. Note3 : X (HIN) : L→H or H→L. Other : H or L. Note4 : Output signal (HOUT) is triggered by the edge of input signal. HIN HOUT FUNCTIONAL DESCRIPTION 1. INPUT/OUTPUT TIMING DIAGRAM LIN 50% HIN tr 90% tdLH(HO) HOUT ∆tdLH LOUT tdHL(LO) tf 10% 10% 90% tdLH(LO) 10% 90% tdHL(HO) 10% ∆tdHL tr 90% tf 50% Aug. 2009 5 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER 2. INPUT INTERLOCK TIMING DIAGRAM When the input signals (HIN/LIN) are high level at the same time, the outputs (HOUT/LOUT) keep their previous status. But if signals (HIN/LIN) are going to high level simultaneously, HIN signals will get active and cause HOUT to enter “H” status. HIN LIN HOUT LOUT Note1 : The minimum input pulse width at HIN/LIN should be to more than 500ns (because of HIN/LIN input noise filter circuit). Note2 : If a high-high status of input signals (HIN/LIN) is ended with only one input signal entering low level and another still being in high level, the output will enter high-low status after the delay match time (not shown in the figure above). Note3 : Delay times between input and output signals are not shown in the figure above. 3. SHORT CIRCUIT PROTECTION TIMING DIAGRAM When an over-current is detected by exceeding the threshold at the CIN and LIN is at high level at the same time, the short circuit protection will get active and shutdown the outputs while FO will issue a low level (indicating a fault signal). The fault output latch is reset by a high level signal at FO_RST pin and then FO will return to high level while the output of the driver will respond to the following active input signal. HIN LIN CIN FO_RST HOUT LOUT FO Note1 : Delay times between input and output signals are not shown in the figure above. Note2 : The minimum FO_RST pulse width should be more than 500ns (because of FO_RST input filter circuit). Aug. 2009 6 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER 4. FO INPUT TIMING DIAGRAM When FO is pulled down to low level in case the FO of other phases becomes low level (fault happened) or the MCU/ DSP sets FO to low level, the outputs (HOUT, LOUT) of the driver will be shut down. As soon as FO goes high again, the output will respond to the following active input signal. HIN LIN FO HOUT LOUT Note1 : Delay times between input and output signals are not shown in the figure above. Note2 : The minimum FO pulse width should be more than 500ns (because of FO input filter circuit). 5. LOW SIDE VCC SUPPLY POWER RESET SEQUENCE When the VCC supply voltage is lower than power reset trip voltage, the power reset gets active and the outputs (HOUT/ LOUT) become “L”. As soon as the VCC supply voltage goes higher than the power reset trip voltage, the outputs will respond to the following active input signals. VCC VPOR voltage HIN LIN HOUT LOUT Note1 : Delay times between input and output signals are not shown in the figure above. Aug. 2009 7 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER 6. HIGH SIDE VBS SUPPLY UNDER VOLTAGE LOCKOUT SEQUENCE When VBS supply voltage drops below the VBS supply UV trip voltage and the duration in this status exceeds the VBS supply UV filter time, the output of the high side is locked. As soon as the VBS supply voltage rises above the VBS supply UV reset voltage, the output will respond to the following active HIN signal. VBSuvr VBS VBSuvt VBSuvr VBS supply UV hysteresis voltage VBS supply UV filter time HIN LIN HOUT LOUT Note1 : Delay times between input and output signals are not shown in the figure above. 7. POWER START-UP SEQUENCE At power supply start-up the following sequence is recommended when bootstrap supply topology is used. (1). Apply VCC. (2). Make sure that FO is at high level. (3). Set LIN to high level and HIN to low level so that bootstrap capacitor could be charged. (4). Set LIN to low level. Note : If two power supply are used for supplying Note : VCC and VBS individually, it is recommended Note : to set VCC first and then set VBS. VCC FO HIN LIN LOUT Aug. 2009 8 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER 8. ACTIVE MILLER EFFECT CLAMP NMOS OUTPUT TIMING DIAGRAM The structure of the output driver stage is shown in following figure. This circuit structure employs a solution for the problem of the Miller current through Cres in IGBT switching applications. Instead of driving the IGBT gate to a negative voltage to increase the safety margin, this circuit structure uses a NMOS to establish a low impedance path to prevent the self-turn-on due to the parasitic Miller capacitor in power switches. VBS/VCC Cres VOUT VIN=0 (from HIN/LIN) VPG/VN1G high dv/dt P1 N1 N2 VS/VNO Cies VN2G Active Miller Effect Clamp NMOS When HIN/LIN is at low level and the voltage of the VOUT (IGBT gate voltage) is below active Miller effect clamp NMOS input threshold voltage, the active Miller effect clamp NMOS is being turned on and opens a low resistive path for the Miller current through Cres. VIN VPG P1 ON P1 OFF P1 ON VN1G N1 OFF N1 ON N1 OFF Active Miller effect clamp NMOS input threshold VOUT VN2G N2 OFF N2 ON TW N2 OFF Active Miller effect clamp NMOS keeps turn-on if TW does not exceed active Miller clamp NMOS filter time Aug. 2009 9 MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER INTERNAL DIODE CLAMP CIRCUITS FOR INPUT AND OUTPUT PINS VCC VCC VCC HIN LIN FO_RST 5K GND CIN FO VNO GND GND VCC VB VB LPOUT LNOUT1 LNOUT2 HPOUT HNOUT1 HNOUT2 VNO VS PACKAGE OUTLINE 24P2Q-A EIAJ Package Code SSOP24-P-300-0.80 24 JEDEC Code – Weight(g) 0.2 13 Lead Material Cu Alloy e b2 HE E F Recommended Mount Pad Symbol 1 12 e1 A G D A2 e b A1 y c z Z1 Detail G Detail F A A1 A2 b c D E e HE L L1 z Z1 y b2 e1 I2 Dimension in Millimeters Min Nom Max 2.1 – – 0.2 0.1 0 – 1.8 – 0.45 0.35 0.3 0.25 0.2 0.18 10.2 10.1 10.0 5.4 5.3 5.2 – 0.8 – 8.1 7.8 7.5 0.8 0.6 0.4 – 1.25 – – 0.65 – – – 0.8 0.1 – – 0° – 8° – 0.5 – – 7.62 – – 1.27 – L1 L I2 Aug. 2009 10