M81725FP

MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION  M81725FP is high voltage Power MOSFET and IGBT driver for high side applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................ ±3A (typ) ¡UNDERVOLTAGE LOCKOUT ¡INPUT FILTER ¡SOP-8 PACKAGE 1. VCC 2. IN 3. NC 4. GND 8. VB 7. OUT 6. VS 5. NC APPLICATIONS MOSFET and IGBT driver for PDP,HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. Outline:8P2S NC: NO CONNECTION BLOCK DIAGRAM VCC 1 8 VB VREG HV LEVEL SHIFT UV DETECT FILTER RQ INTER LOCK R S POR 7 OUT IN 2 VREG/VCC LEVEL SHIFT FILTER PULSE GEN 6 VS GND 4 Aug. 2009 1 MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) Symbol VB VS VBS VOUT VCC VIN Pd Kq Rth(j-c) Tj Topr Tstg TL Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction - Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder heat-proof(flow) For Pb Free IN Ta = 25°C , On Board Ta > 25°C , On Board VBS = VB-VS Test conditions Ratings –0.5 ~ 624 VB-24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 0.6 4.8 50 –20 ~ 150* –20 ~ 125 –40 ~ 150 260(10s) Unit V V V V V V W mW/°C °C/W °C °C °C °C * Please adjust the VS potential to 500V or less when the junction temperature (Tj) exceeds 125°C. RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VOUT VCC VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage IN VB > 10V VBS = VB–VS Test conditions Min. VS+10 –5 10 VS 10 0 Limits Typ. — — — — — — Max. VS+20 500 20 VB 20 7 Unit V V V V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (ABSOLUTE MAXIMUM RATINGS) 0.7 0.6 Power dissipation Pd (W) 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Ambient Temparature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, Vcc=VBS(=VB-VS)=15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvt Parameter Floating Supply Leakage Current VBS standby Current Vcc standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time Power-On Reset Voltage Power-On Reset Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Input Filter Time Test conditions VB = VS = 600V IN = 0V IN = 0V IO = 0A, LO, HO IO = 0A, LO, HO IN IN VIN = 5V VIN = 0V Min. — — 0.1 13.8 — 4.0 — — — 8.0 7.4 0.3 — — 300 Limits Typ.* — 0.2 0.3 14.4 — — — 17 0 8.9 8.2 0.7 7.5 — — 3.0 3.0 10 2.5 200 180 25 20 100 100 Max. 1.0 0.5 0.6 — 0.1 — 0.8 40 1 9.8 9.0 — — 6.0 — — — 20 3.0 280 260 45 35 — — Unit µA mA mA V V V V µA µA V V V µs V ns A A Ω Ω ns ns ns ns ns ns VBSuvh tVBSuv VPonr tPonr(FIL) IOH IOL ROH ROL tdLH tdHL tr tf IN(FIL) VO = 0V, VIN = 5V, PWD < 10µs VO = 15V, VIN = 0V, PWD < 10µs IO = –200mA, ROH = (VOH–VO)/IO IO = 200mA, ROL = VO/IO CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs CONVEX PULSE : IN CONCAVE PULSE : IN 2.0 2.0 — — — — — — — — * Typ. is not specified Aug. 2009 3 MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER TIMING REQUIREMENT IN 50% 50% tdLH tr tdHL tf OUT 90% 90% 10% 10% FUNCTION TABLE IN H →L L→H X VBS UV H H L OUT L H L OUT = Low OUT = High OUT = Low, VBS UV tripped Behavioral state Note1 : “L” state of VBS UV, Vcc UV means that UV trip voltage. 2 : X (IN) : L→H or H→L. 3 : Output signal (HO) is triggered by the edge of input signal. IN HO Aug. 2009 4 MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER Operation sequence Diagram VCC VBS UVTrip VBS VBSuvt VBS UVReset VBSuvr VPonrReset VPonr IN tVBSuv tPonr (FIL) OUT 1. Input/Output Timing HIGH ACTIVE (When input signal is “H”, then output signal is “H”.) 2. VBS Supply Under Voltage Lockout If VBS supply voltage drops below UV trip voltage (VBSuvt) for VBS supply UV filter time, output signal is shut down. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. Note: If the VBS drops below VPON, the filter time will become tPOR (FIL) instead of tVBSuv. 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS secondly. When shutting off supply voltage, please shut off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Note: If VCC is below its recommended value: 10V, output may not response input signals. Note: Please take enough evaluation in the case of power supply shut down and power supply applying after its shut-down. Aug. 2009 5 MITSUBISHI SEMICONDUCTORS M81725FP HIGH VOLTAGE HIGH SIDE DRIVER PACKAGE OUTLINE 8 5 F NOTE) 1. DIMENSIONS “*1” AND “*2” DO NOT INCLUDE MOLD FLASH. 2. DIMENSION “*3” DOES NOT INCLUDE TRIM OFFSET. HE *1 E 1 Index mark 4 c *2 D A2 A1 Reference Dimension in Millimeters Symbol Min Nom Max e y *3 bp Detail F D E A2 A1 A bp c q HE e y L 4.8 4.2 – 0.05 – 0.35 0.13 0° 5.9 1.12 – 0.2 5.0 4.4 1.5 – – 0.4 0.15 – 6.2 1.27 – 0.4 5.2 4.6 – – 1.9 0.5 0.2 10° 6.5 1.42 0.1 0.6 A L Aug. 2009 6