M81731FP

MITSUBISHI SEMICONDUCTORS M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81731FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................ ±3A (typ) ¡UNDERVOLTAGE LOCKOUT ¡BUILT-IN INPUT NOISE FILTER ¡SOP-16 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. 16 VCC NC IN1 NC NC IN2 NC GND VB1 HO1 VS1 NC NC VB2 HO2 VS2 1 8 NC:NO CONNECTION 9 Outline:16P2N BLOCK DIAGRAM VCC 1 16 VB1 VREG HV LEVEL SHIFT UV DETECT FILTER RQ INTER LOCK R S Ponr 15 HO1 IN1 3 VREG/VCC LEVEL SHIFT FILTER PULSE GEN 14 11 VS1 VB2 HV LEVEL SHIFT UV DETECT FILTER RQ INTER LOCK R S Ponr 10 HO2 IN2 6 VREG/VCC LEVEL SHIFT FILTER PULSE GEN 9 VS2 GND 8 Aug. 2009 1 MITSUBISHI SEMICONDUCTORS M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VOUT VCC VIN PD Kq Rth(j-c) Tj Topr Tstg TL Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder heat-proof (reflow) Pb Free IN1 or IN2 Ta = 25°C, On Board Ta > 25°C, On Board Test conditions VB1 or VB2 VS1 or VS2 VBS1 = VB1-VS1 or VBS2 = VB2-VS2 HO1 or HO2 Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 1.0 8.0 50 –20 ~ 150* –20 ~ 125 –40 ~ 150 255:10s,max 260 Unit V V V V V V W mW/°C °C/W °C °C °C °C * Please adjust the VS potentian to 500V or less when the junction temperature (Tj) exceeds 125°C. RECOMMENDED OPERATING CONDITIONS Limits Symbol VB VS VBS VOUT VCC VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage IN1 or IN2 Test conditions VB1 or VB2 VS1 (VB1>10V) or VS2 (VB2>10V) VBS1 = VB1-VS1 or VBS2 = VB2-VS2 HO1 or HO2 Min. VS+10 –5 10 VS 10 0 Typ. — — — — — — Max. VS+20 500 20 VB 20 7 Unit V V V V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 1.2 Package Power Dissipation Pd (W) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Temparature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol IFS1 IFS2 IBS1 IBS2 ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VPonr tPonr(FIL) IOH IOL ROH ROL tdLH tdHL tr tf ∆tdLH ∆tdHL IN(FIL) Parameter Floating Supply Leakage Current1 Floating Supply Leakage Current2 VBS1 Standby Current VBS2 Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time Power-On Reset Voltage Power-On Reset Filter TIme Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Input Filter Time Test conditions VB1 = VS1 = 600V VB2 = VS2 = 600V IN1 = 0V IN2 = 0V IN1 = IN2 = 0V IO = 0A, HO1, HO2 IO = 0A, HO1, HO2 IN1, IN2 IN1, IN2 VIN = 5V, IN1, IN2 VIN = 0V, IN1, IN2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VO = 0V, VIN = 5V, PWD