ML1016R

MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1016R, ML120G6 FEATURES • High Power: 30mW (CW), 50mW (pulse) • Visible Light: 658nm (typ) DESCRIPTION ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation. APPLICATION DVD(Digital Versatile Disc)-RAM/RW Drive Conditions CW Ratings 35 50 2 30 10 -10 ~ +60 -40 ~ +100 mW V V mA °C °C Unit ABSOLUTE MAXIMUM RATINGS Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Note 1) Pulse(Note 2) - Reverse voltage (laser diode) Reverse voltage (Photodiode) Forward current (Photodiode) Case temperature Storage temperature Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department. Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1µs ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25˚C) Symbol Ith Iop Vop η λp Parameter Threshold current Operating current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output current (Photodiode) (only for ML1016R) Dark current (Photodiode) Capacitance (Photodiode) CW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW,VRD=1V RL=10Ω(Note 3) VRD=10V f=1MHz,VRD=5V Test conditions Min. 655 7 17 0.05 Typ. 40 80 2.7 0.7 658 8.5 22 0.35 7 Max 70 120 3.0 666 11 26 2.5 0.5 Unit mA mA V mW/mA nm ° ° mA θ// θ⊥ Im ID Ct mA pF Note 3:RL=the load resistance of photodiode for ML1016R MITSUBISHI ELECTRIC (1/4) as of December '99 MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS OUTLINE DRAWINGS ML1016R ML120G6 PD CASE LD ML1016R CASE LD ML120G6 Typical Characteristics 50 Light Output Power, Po (mW) 40 30 20 10 CW 0 0 50 100 150 200 Operating Current , Iop(mA) Light Output Power, Po (mW) Tc=25°C 60°C 50 40 30 Reference data Tc=25 40 50 60 70°C 20 10 0 Pulse Duty: 50% Width: 1ms 0 50 100 150 200 Operating Current , Iop(mA) Light Output Power vs. Current (CW) Light Output Power vs. Current (Pulse) as of December '99 MITSUBISHI ELECTRIC (2/4) MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 100 Threshold Current, Ith (mA) CW 50 Monitor Current, Im (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 70 Tc=25°C CW 10 0 10 20 30 40 50 60 0 Case Temperature, Tc (°C) 10 20 30 40 50 Light Output Power, Po (mW) Threshold Current vs. Temperature Monitor Photodiode Current 100 Relative Intensity (%) Astigmatic Distance, AS (mm) Tc=25°C Po=30mW θ//=9° θ⊥=22° 10 Tc=25°C, CW NA=0.7 PMMA Lens 50 5 0 -60 -40 -20 0 20 Angle (deg.) 40 60 0 0 10 20 30 40 50 Light Output Power, Po (mW) Far-Field-Patterns Astigmatic Distance as of December '99 MITSUBISHI ELECTRIC (3/4) MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 668 Peak Wavelength, λp (nm) Peak Wavelength, λp (nm) 666 664 662 660 658 656 654 0 10 20 30 40 50 60 70 ~0.17nm/°C Po=30mW CW 661 660 659 658 657 656 Case Temperature, Tc (°C) Tc=25°C CW ~0.05nm/mW 0 10 20 30 40 50 Light Output Power, Po (mW) Peak Wavelength vs. Temperature Peak Wavelength vs. Light Output Power 1600 1400 Polarization Ratio, P⊥/P// 1200 1000 800 600 400 200 0 0 10 20 30 40 50 Light Output Power, Po (mW) 25°C NA=0.5 TE Mode Polarization Ratio as of December '99 MITSUBISHI ELECTRIC (4/4)