ML101J14

t opmen l r Deve Unde inary lim MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS Pre TYPE NAME ML101J14, ML120G14 This Model is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX14 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with FEATURES • High Output Power: 50mW (CW) , 70mW (Pulse) 660nm (typ.) • Visible Light: emission wavelength of 660 nm and standard PULSE light output of 70mW. ML1XX14 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and highpower operation. APPLICATION High-Density Optical Disc Drives Rewritable DVD(Digital Versatile Disc) Drives ABSOLUTE MAXIMUM RATINGS Symbol Po VRL Tc Tstg Parameter Note 1) Conditions CW Ratings 60 70 2 -10 ~ +60 -40 ~ +100 mW V °C °C Unit Light output power Reverse voltage Case temperature Storage temperature Pulse(Note 2) - Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Section. Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1µs ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C) Symbol Parameter Threshold current Operating current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Test conditions CW CW, Po=50mW CW, Po=50mW CW, Po=50mW CW, Po=50mW CW, Po=50mW CW, Po=50mW Min. 655 Typ. 57 132 2.5 0.67 660 8.5 22 Max 3.0 666 Unit mA mA V mW/mA nm ° ° Ith Iop Vop η λp θ// θ⊥ MITSUBISHI ELECTRIC (1/5) as of December '99 MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS OUTLINE DRAWINGS ML101J14 ML120G14 (1) LD (3) CASE (2) ML101J14 (1) (3) CASE LD (2) ML120G14 There is no model with a monitor photo diode in ML1XX14 series. MITSUBISHI ELECTRIC (2/5) as of December '99 MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics Light Output Power, Po (mW) 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 Reference Data Tc=25 40 50 60 70°C Duty Cycle: 50 % Pulse Width: 0.1 µsec Operating Current, Iop (mA) Light Output Power vs. Current (Pulse) 70 Tc=25 40 50 60 70°C Light Output Power, Po (mW) 60 50 40 30 20 10 0 0 50 100 150 200 250 300 Reference Data Operating Current, Iop (mA) Light Output Power vs. Current (CW) MITSUBISHI ELECTRIC (3/5) as of December '99 MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 1 Po: 50 mW, CW Tc: 25 °C Intensity 0.5 0 -60 -40 -20 0 20 40 60 Angle ( ° ) Far Field Patterns 100 Threshold Current, Ith (mA) 50 CW 10 0 10 20 30 40 50 60 70 Case Temperature, Tc (°C) Threshold Current vs Temperature MITSUBISHI ELECTRIC (4/5) as of December '99 MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 670 Peak Wavelength, λp (nm) Po: 50 mW, CW 665 660 ∆λp/∆Tc=0.18 (nm/°C) 655 0 10 20 30 40 50 60 70 Case Temperature, Tc (°C) Temperature dependence of Peak Wavelength 661 Peak Wavelength, λp (nm) Tc: 25 °C, CW 660 659 658 ∆λp/∆Po=0.05 (nm/mW) 657 656 0 10 20 30 40 50 Light Output Power, Po (mW) Light Output Power dependence of Peak Wavelength MITSUBISHI ELECTRIC (5/5) as of December '99