ML44126R

ML4XX26 SERIES ML40126N ML44126N,ML44126R FEATURES • Output 5mW(CW) • Built-in monitor photodiode • Low droop APPLICATION • Laser Beam Printing, Digital Copy MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME FEATURES ML4xx26 series is AlGaAs laser diodes which provide a stable, single transverse mode ocillation with emission wavelength of 785nm and standard continuous light output of 5mW. ML4xx26 are hermetically sealed devices having the photodiode for optical output monitoring. ML4xx26 is produced by the MOCVD crystal growth method which is excellent in mass production and characteristics uniformity. ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Reverse voltage (laser diode) Reverse voltage (Photodiode) Forward current (Photodiode) Case temperature Storage temperature Conditions CW Ratings 8 2 30 10 -40~ +60 -40~ +100 Unit mW V V mA °C °C Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department. ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25°C) Symbol Ith Iop η Vop λp Parameter Threshold current Operation current Slope efficiency Operating voltage Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output current (Photodiode) Dark current (Photodiode) Capacitance (Photodiode) Droop Test conditions CW CW,Po=5mW CW,Po=5mW CW,Po=5mW CW,Po=5mW CW,Po=5mW CW,Po=5mW CW,Po=5mW, VRD=1V RL=10Ω(Note3) VRD=10V VRD=5V, f=1MHz CW,Po=3mW MIn 0.25 770 8 22 Typ. 25 40 0.35 2 785 11 29 0.45 0.90 7 6 Max 40 70 0.45 2.5 800 15 36 0.5 Unit mA mA mW/mA V nm θ// θ⊥ Im Im(Note2) ID Ct D ° ° mA µA pF % Note 2: Applicable to ML44126R and ML44126N Note 3: RL=the load resistance of photodiode MITSUBISHI ELECTRIC (1/4) as of February '00 MITSUBISHI LASER DIODES ML4XX26 SERIES FOR OPTICAL INFORMATION SYSTEMS OUTLINE DRAWINGS ML40126N CASE PD LD ML40126N ML44126N ML44126R PD CASE LD ML44126N CASE PD LD ML44126R MITSUBISHI ELECTRIC (2/4) as of February '00 MITSUBISHI LASER DIODES ML4XX26 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Chracteristics Tc=10 25 40 50 60°C Light Output Power, Po (mW) 5 4 3 2 1 100 Relative Intensity (%) 80 60 40 20 0 -60 Tc=25°C Po=5mW θ//=11° θ =29° CW 0 0 20 40 60 80 100 -40 -20 0 20 40 60 Operating Current, Iop (mA) Light Output Power vs. Current (CW) Angle (deg.) Far-Filed-Patterns Threshold Current, Ith (mA) Peak Wavelength, λ p (nm) 810 805 800 795 790 785 780 0 10 20 30 40 50 60 70 Po=5mW CW 100 Po=5mW CW 10 0 10 20 30 40 50 60 70 Case Temperature, Tc (°C) Peak Wavelength vs. Temperature Case Temperature, Tc (°C) Threshold Current vs. Temperature as of February '00 MITSUBISHI ELECTRIC (3/4) MITSUBISHI LASER DIODES ML4XX26 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Chracteristics Peak Wavelength, λp (nm) Monitor Current, Im (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 ML40126N Tc=25°C CW 793 792 791 790 789 788 0 1 2 3 4 5 6 7 8 Tc=25°C CW 4 5 6 L ig h t Ou tp u t P o w e r (mW) Monitor Photodiode Current Light Output Power, Po (mW) Peak Wavelength vs. Light Output Power as of February '00 MITSUBISHI ELECTRIC (4/4)