ML520G51

ML5xx51 LD SERIES FOR DISPLAY SYSTEM MITSUBISHI LASER DIODES TYPE NAME ML520G51 Please note that this data sheet may be changed without any notice. DESCRIPTION Mitsubishi ML520G51 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 150mW. This LD has broad-stripe structure which enables high output power. FEATURES • High Output Power: 150mW (CW) • High Efficiency: 1.0mW/mA (typ.) • Visible Light: 638nm (typ.) • φ5.6mm TO-CAN PKG APPLICATION • Display system, Bio-medical ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Po VRL Tc Tstg Parameter Light output power Reverse voltage Case temperature Storage temperature Conditions CW Ratings 150 2 -5 ~ +55 -40 ~ +100 Unit mW V °C °C Note1: The maximum rating means the limitation over which the laser should not be operated even instant time. This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C) Symbol Ith Iop Vop Parameter Threshold current Operating current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Test conditions CW CW, Po=150mW CW, Po=150mW CW, Po=150mW CW, Po=150mW CW, Po=150mW CW, Po=150mW Min. 80 200 1.8 0.8 632 1 25 Typ. 130 260 2.1 1.0 638 7 35 Max 180 330 2.5 1.3 644 13 45 Unit mA mA V mW/mA nm ° ° η λp θ// θ⊥ MITSUBISHI ELECTRIC (1/4) ML5xx51 LD SERIES FOR DISPLAY SYSTEM MITSUBISHI LASER DIODES OUTLINE DRAWINGS Dimentions in mm ± 90° 2° ML520G51 0.4 +0.1 -0 φ2.0±0.3 (P. C. D. ) x 0.4+0.1 -0 (1) (3) CASE 1.0±0.1 ±0.03 (Glass) 0.25 φ5.6 -0.03 φ4.4 +0.2 -0.3 φ3.55±0.1 +0 LD φ1.6±0.1 2.3 ±0.3 ±0.08 1.27 (2) Reference plane 0.2±0.08 0.4MAX 3-φ0.45±0.1 1.2 ±0.1 ML520G51 φ5.6mm 7.0 ±1 (1) (3) (2) MITSUBISHI ELECTRIC (2/4) ML5xx51 LD SERIES FOR DISPLAY SYSTEM MITSUBISHI LASER DIODES Typical Characteristics of ML520G51 Tc=15 25 35 45 55 °C 150 CW Light Output Power (mW) Po=150mW CW 50 0 0 100 200 300 400 500 -50 -40 -30 -20 -10 0 10 20 30 40 50 Angle (°) Current (mA) Intensity (a.u.) 100 θ∥ =7° θ⊥ =35° Light Output Power vs. Current (CW) Far-Field-Patterns 655 650 Peak Wavelength (nm) 645 640 635 630 625 620 0 50 100 150 Light output Power (mW) ～ 0.005nm/mW Tc=25℃ CW Peak Wavelength (nm) 655 650 645 640 635 630 625 620 0 20 40 60 80 Temperature (℃ ) ～ 0.19nm/℃ Po=150mW CW Peak Wavelength vs. Light Output Power Peak Wavelength vs. Temperature MITSUBISHI ELECTRIC (3/4) ML5xx51 LD SERIES FOR DISPLAY SYSTEM MITSUBISHI LASER DIODES Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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