ML728C19S

MITSUBISHI LASER DIODES ML7xx19 SERIES Notice: Some parametric limits are subject to change. 1310nm InGaAsP FP LASER DIODES TYPE NAME DESCRIPTION ML720J19S, ML720K19S, ML728C19S ML725B19F, ML725C19F FEATURES •1310nm typical emission wavelength, FP-LDs •Wide temperature range operation(-40 to 85ºC) •φ5.6mm TO-CA N package Flat window cap : ML720J19S, ML725B19F Ball lens cap : ML720K19S, ML725C19F •φ3.8mm TO-CA N package Ball lens cap : ML728C19S ML7XX19 series are InGaAsP laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard continuous light output of 5mW. ML7XX19 are hermetically sealed devices having the photo diode for optical output monitoring. This is suitable for such applications as the light sources for optical communication systems up to 2.5Gbps transmission applications. APPLICATION •Optical communication system ABSOLUTE MAXIMUM RATINGS Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage temperature Conditions CW Ratings 10[7] 2 20 2 -40 to +85 -40 to +100 Unit mW V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC) Symbol Ith Iop Vop η λc ∆λ θ// θ⊥ tr,tf Im Id Ct Pf Df Parameter Threshold current Operation current Operating voltage Slope efficiency Center wavelength Spectral Width Beam divergence angle(parallel) Beam divergence angle (perpendicular) Rise and Fall time (20%-80%) Monitor Current (PD) Dark Current (PD) Capacitance (PD) Fiber Coupling characteristics at peak coupling Test Conditions CW CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW],RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] Ib=Ith,Po=5mW[3mW],20-80% CW, Po=5mW[3mW], VRD=1V, VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 ML720K19S CW, PL=3mW,SI10/125 ML725C19F ML728C19S Min. 3 10 --0.3[0.2] 1290 --------0.1 ----0.2 5.0 3.0 Typ. 5 20 1.1 0.45[0.35] 1310 1.0 25[11] 30[11] 0.1 0.5 --10 0.5 5.8 3.4 Max. 15 30 1.5 0.6[0.5] 1330 2.0 ----0.15 0.9 0.1 20 --6.2 3.8 Unit mA mA V mW/mA nm nm deg. deg. nsec mA µA pF mW mm Note : [ ] applied to the lens cap type. Note : Pf, Df are applied to the ball lens type. Note : Df is a distance between reference plane of the base to the fiber. MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML7xx19 SERIES 1310nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML720J19S ML725B19F 2-90° φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) (2) (1) (4) Ｘ PD (0.25) (4) 1±0.1 0.25 ±0.03 φ3.55±0.1 (Glass) φ1.5Min. φ1.0Min. 1.27 ±0.03 ML720J19S (3) LD Emitting Facet Case 2.1±0.15 Reference Plane (1) (2) PD ±0.1 1.2 18 ±1 (4) φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 ML725B19F Pin Connection ( Top view ) Dimension : mm ML720K19S ML725C19F φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) (2) PD 2-90° (1) (4) Ｘ (0.25) (4) 1±0.1 ML720K19S φ3.55±0.1 φ1.5±0.005 (3) LD Case (5.8) 3.9 ±0.2 1.27 ±0.03 (3.05) Emitting Reference Facet Plane (1) PD (2) ±0.1 1.2 (4) φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 ML725C19F Pin Connection ( Top view ) 18 ±1 MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML7xx19 SERIES 1310nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS ML728C19S φ3.8 -0.03 +0 (3) (3) X Case LD (4) (1) (φ3.7) φ2.92±0.03 (R0.13MAX) (2) (4) (Df=3.4) (2.6) PD Emitting Facet 1.4 7±0.5 1.0±0.1 Reference Plane ML728C19S Pin Connection ( Top view ) φ1.43 (P.C.D.) (1) 4-φ0.35±0.03 (2) MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML7xx19 SERIES 1310nm InGaAsP FP LASER DIODE TYPICAL CHARACTERISTICS 10 Light output Po (mW) 8 6 4 2 0 0 10 20 30 40 50 60 Forward current If (mA) Fig. 1 Light output v.s. forward current 25°C 50°C 75°C 85°C -30 Relative intensity (dB) -40 -50 -60 -70 -80 1295 Fig. 2 Spectrum Po=5mW, CW Tc=25°C 1305 1315 1325 1335 1345 Wavelength (nm) 1.2 Relative light output 1.0 0.8 0.6 0.4 0.2 0 .0 -60 Fig. 3 Far field pattern Po=5mW Tc=25°C θ⊥ θ// -40 -20 0 Angle (°) 20 40 60