ML920J40S-04

MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME DESCRIPTION ML925B40F / ML920J40S ML925J40F / ML920L40S APPLICATION · 2.5Gbps long-haul transmission · Coarse WDM application ML9XX40 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx40 can operate in the wide temperature range from 0oC to 85 oC without any temperature control. They are well suited for light source in long distance digital transmission application of coarse WDM. FEATURES · λ/4 shifted grating structure · Wide temperature range operation (0oC to 85oC) · High side-mode-suppression-ratio (typical 45dB) · High resonance frequency (typical 11GHz) ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL IFD VRD Tc Tstg Parameter Output power Forward current (Laser diode) Reverse voltage (Laser diode) Forward current (Photo diode) Reverse voltage (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 6 150 2 2 20 0 to +85 -40 to +100 Unit mW mA V mA V ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC) Symbol Ith Parameter Threshold current Test conditions CW CW Tc=85ºC CW, Po=5mW CW, Po=5mW Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW, Tc=0 to 85ºC 2.48832Gbps,Ib=Ith, Ipp=40mA CW, Po=5mW CW, Po=5mW 2.48832Gbps,Ib=Ith, Ipp=40mA 2.48832Gbps,Ib=Ith, Ipp=40mA 20%-80% CW, Po=5mW,VRD=1V,RL=10Ω VRD=5V VRD=5V Min. Typ. Max. Unit --10 15 mA --35 40 --45 50 --35 45 mA --70 80 --90 100 --1.1 1.5 V 0.17 0.22 --mW/mA 0.15 0.20 --, nm 35 45 --dB --45 ----25 --deg. ------0.1 ----30 11 80 ----10 ----120 1.0 0.1 20 deg. GHz ps mA µA pF Iop Operation current Vop η λp SMSR θ // θ┴ fr tr,tf Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Side mode suppression ratio(RF) Beam divergence angle (parallel) (perpendicular) Resonance frequency Rise and Fall time Monitoring output current (PD) Im Dark current (PD) Id Ct Capacitance (PD) Applied to ML9xx40-04~09 and -12~17. Applied to ML9xx40-10~11 and -18~19. Applied to ML925J40F and ML920L40S. Beam divergence is not applied to ML925J40F and ML920L40S. Except influence of the 18mm lead. MITSUBISHI ELECTRIC Feb. 2005 MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are subject to change Peak Wavelength Type ML925B40F-01 / ML920J40S-01 ML925J40F-01 / ML920L40S-01 ML925B40F-04 / ML920J40S-04 ML925J40F-04 / ML920L40S-04 ML925B40F-05 / ML920J40S-05 ML925J40F-05 / ML920L40S-05 ML925B40F-06 / ML920J40S-06 ML925J40F-06 / ML920L40S-06 ML925B40F-07 / ML920J40S-07 ML925J40F-07 / ML920L40S-07 ML925B40F-08 / ML920J40S-08 ML925J40F-08 / ML920L40S-08 ML925B40F-09 / ML920J40S-09 ML925J40F-09 / ML920L40S-09 ML925B40F-10 / ML920J40S-10 ML925J40F-10 / ML920L40S-10 ML925B40F-11 / ML920J40S-11 ML925J40F-11 / ML920L40S-11 Symbol Test Condition CW, Po=5mW Tc= 0 to 85ºC Min. 1530 1467 1487 1507 λp CW, Po=5mW Tc= 25ºC 1527 1547 1567 1587 1607 Limits Typ. 1550 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1570 1473 1493 1513 1533 1553 1573 1593 1613 nm Unit 2.5Gbps InGaAsP DFB LASER DIODE Peak Wavelength Type ML925B40F-12 / ML920J40S-12 ML925J40F-12 / ML920L40S-12 ML925B40F-13 / ML920J40S-13 ML925J40F-13 / ML920L40S-13 ML925B40F-14 / ML920J40S-14 ML925J40F-14 / ML920L40S-14 ML925B40F-15 / ML920J40S-15 ML925J40F-15 / ML920L40S-15 ML925B40F-16 / ML920J40S-16 ML925J40F-16 / ML920L40S-16 ML925B40F-17 / ML920J40S-17 ML925J40F-17 / ML920L40S-17 ML925B40F-18 / ML920J40S-18 ML925J40F-18 / ML920L40S-18 ML925B40F-19 / ML920J40S-19 ML925J40F-19 / ML920L40S-19 Symbol Test Condition Min. 1468 1488 1508 λp CW, Po=5mW Tc= 25ºC 1528 1548 1568 1588 1608 Limits Typ. 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1472 1492 1512 1532 nm 1552 1572 1592 1612 Unit MITSUBISHI ELECTRIC Feb. 2005 MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimensions : mm 2.5Gbps InGaAsP DFB LASER DIODE ML925B40F ML920J40S 2-90° φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) PD (1) (4) (2) Ｘ (0.25) (4) ML925B11F ML925B40F (3) LD 1.27 ±0.03 Emitting Facet 1±0.1 0.25 ±0.03 φ3.55±0.1 (Glass) φ2.0Min. φ1.0Min. Case 2.1±0.15 (1) PD (2) Reference Plane ±0.1 1.2 (4) 18 ±1 φ2.0 ±0.25 (P.C.D.) (1) (2) ML920J40S ML920J11S 4-φ0.45 ±0.05 Pin Connection ( Top view ) ML925J40F ML920L40S Top View 2-90° Dimensions : mm φ5.6 -0.03 φ4.3 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) PD (1) (4) (2) Ｘ (0.25) (4) ML925J11F ML925J40F (3) 1±0.1 φ3.75±0.1 Ｚ Case LD 3.97 ±0.15 (7.51) 1.27 ±0.03 Emitting Facet (1) PD (2) Reference Plane ±0.1 1.2 (4) φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 (1) (2) 18 ±1 ML920L40S ML920L11S Pin Connection Pin Connection ( Topview) ) (Top view MITSUBISHI ELECTRIC Feb. 2005