ML920K45S

MITSUBISHI LASER DIODES ML9xx45 SERIES Notice: Some parametric limits are subject to change. 1550,1520nm InGaAsP FP LASER DIODES TYPE NAME DESCRIPTION ML920J45S , ML920K45S, ML920Y45S ML925B45F , ML925C45F FEATURES •1550 or 1520nm typical emission wavelength, FP-LDs •Low threshold current, low operating current •Wide temperature range operation (Tc=-40 to 85deg.C) •φ5.6mm TO-CA N package Flat window cap : ML920J45S, ML925B45F Ball lens cap : ML920K45S, ML925C45F, ML920Y45S ML9XX45 series are InGaAsP laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW. ML9XX45 are hermetically sealed devices having the photo diode for optical output monitoring. This is suitable for such applications as FTTH (Fiber to the Home)systems. APPLICATION •~155Mbps FTTH system ABSOLUTE MAXIMUM RATINGS Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage temperature Conditions CW Ratings 6[4] 2 20 2 -40 to +85 -40 to +100 Unit mW V V mA deg.C deg.C ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC) Symbol Ith Iop Vop η λc ∆λ θ∥ θ⊥ tr,tf Im Id Ct Pf(Note2) Df(Note2) Parameter Threshold current Operation current Operating voltage Slope efficiency Center wavelength Spectral Width Beam divergence angle(parallel) Beam divergence angle (perpendicular) Rise and Fall time (10%-90%) Monitor Current (PD) Dark Current (PD) Capacitance (PD) Fiber Coupling characteristics at peak coupling Test Conditions CW CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] -01spec -02spec CW, Po=5mW, [3mW]RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] Ib=Ith,Po=5mW [3mW],10-90% CW, Po=5mW[3mW], VRD=1V, VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 ML920K45S CW, PL=3mW ML925C45F SI10/125 ML920Y45S Min. 3 10 --0.15[0.1] 1520 1495 --------0.1 ----0.2 5.0 6.0 Typ. 10 30 1.1 0.25[0.2] 1550 1520 1.5 25[11] 30[11] 0.3 0.5 --10 0.5 5.8 6.5 Max. 20 50 1.5 0.5 1580 1544 3 ----0.7 1.0 0.1 20 --6.2 7.0 Unit mA mA V mW/mA nm nm deg. deg. nsec mA µA pF mW mm Note : [ ]applied to the lens cap type. Note : Pf,Df are applied to the ball lens type. Note : Df is a distance between reference plane of the base to the fiber. MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML920J45S ML925B45F 2-90° φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) Ｘ (2) (1) (4) (2) PD (4) (0.25) ML920J45S 1±0.1 0.25 ±0.03 φ3.55±0.1 (Glass) φ1.5Min. φ1.0Min. 1.27 ±0.03 Emitting Facet (3) LD Case 2.1±0.15 (1) (2) PD Reference Plane ±0.1 1.2 (4) 18 ±1 φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 ML925B45F Pin Connection ( Top view ) Dimension : mm ML920K45S ML925C45F φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) (2) PD 2-90° (1) (4) Ｘ (0.25) (4) 1±0.1 ML920K45S φ3.55±0.1 φ1.5±0.005 (3) LD Case (5.8) 3.9 ±0.2 1.27 ±0.03 (3.05) Emitting Reference Facet Plane (1) (2) PD ±0.1 1.2 (4) φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 ML925C45F Pin Connection ( Top view ) 18 ±1 MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML920Y45S φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 2-90° (1) (4) (2) Ｘ (0.25) (3) LD Case 1±0.1 (1) (2) PD φ3.55±0.1 φ1.5±0.005 (6.5) (4) 3.6 ±0.2 ML920Y45S 1.27 ±0.03 (3.0) Emitting Reference Facet Plane ( Top view ) ±0.1 18 ±1 1.2 φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 MITSUBISHI ELECTRIC May 2004