ML920L22S-04

ML920L22S-04

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    ML920L22S-04 - InGaAsP DFB LASER DIODES - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
ML920L22S-04 数据手册
MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML925B16F / ML925B22F ML920J11S / ML920J16S / ML920J22S ML925J11F / ML925J16F / ML925J22F ML920L11S / ML920L16S / ML920L22S APPLICATION ·~1.25Gbps digital transmission system · Coarse WDM application DESCRIPTION ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring. FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( 0 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · 8 wavelength with 20nm space at 1470 ~ 1610nm · φ5.6mm TO-CAN package · Flat window cap, or Aspherical lens cap ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 10 150 2 20 2 0 to +85 -40 to +100 Unit mW mA V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ] Symbol Ith Iop Vop η λp θ // θ┴ SMSR tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Side mode suppression ratio Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= 0 to +85ºC Ib=Ith, 20-80% CW, Po=5mW VRD=5V VRD=5V Min. ----------0.20 ----35 Typ. 8 30 25 60 1.1 0.28 25 35 40 Max. 15 50 40 80 1.5 --35 45 --Unit mA mA V mW/mA nm deg. deg. dB --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions Min. Typ. Max. Unit CW --8 15 mA --30 50 CW, Tc=85ºC CW, Po=5mW --25 40 mA --60 80 CW, Po=5mW, Tc=85ºC CW, Po=5mW --1.1 1.5 V CW, Po=5mW 0.20 0.28 --mW/mA CW, Po=5mW nm CW, Po=5mW 35 40 --dB Tc= 0 to +85ºC CW, Po=5mW, SMF 1.5 2.0 --mW CW, Po=5mW, SMF 6.5 7.5 8.5 mm Ib=Ith, 20-80% --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF Except influence of the 18mm lead. Limits Min. 1467 1487 1507 1527 1547 1567 1587 1607 Typ. 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1473 1493 1513 1533 1553 1573 1593 1613 Peak wavelength Type ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04 ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05 ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04 ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05 ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06 ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04 ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05 ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06 Symb ol Test condition Unit λp CW Po=5mW Tc=25ºC nm MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS InGaAsP DFB LASER DIODES ML925B11F ML925B16F ML925B22F ML920J11S ML920J16S ML920J22S Dimension : mm φ5.6 -0.03 φ4.25 Y (0.25) (3) +0 (3) LD Case (1) (2) PD 2-90° (1) (4) (2) X (4) 1±0.1 (0.25) ML925B11F,ML925B16F,ML925B22F 0.25 ±0.03 φ3.55±0.1 (3) LD 1.27 ±0.0 3 Case (Glass) φ2.0Min. φ1.0Min. 2.1±0.1 5 (1) Emitting Facet Reference Plane (2) PD ±0.1 18 ±1 1.2 (4) φ2.0 ±0.25 (P.C.D.) (1) (2) ML920J11S,ML920J16S,ML920J22S 4-φ0.45 ±0.05 Pin Connection ( Top view ) ML925J11F ML925J16F ML925J22F ML920L11S ML920L16S ML920L22S (7.51) Dimension : mm (3) +0 φ5.6 -0.03 Case LD φ4.3 Y (0.25) Top View (3) (1) (2) PD 2-90° (4) (1) (4) (2) X (0.25) ML925J11F,ML925J16F,ML925J22F 1±0.1 φ3.75±0.1 Z (3) LD Case 3.97 ±0.15 1.27 ±0.03 (1) Emitting Facet (2) PD Reference Plane ±0.1 18 ±1 1.2 (4) φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 ML920L11S,ML920L16S,ML920L22S Pin Connection ( Top view ) (1) (2) MITSUBISHI ELECTRIC Dec. 2004
ML920L22S-04
1. 物料型号: - ML925B11F / ML925B16F / ML925B22F - ML920J11S / ML920J16S / ML920J22S - ML925J11F / ML925J16F / ML925J22F - ML920L11S / ML920L16S / ML920L22S

2. 器件简介: - ML9XX11、ML9XX16和ML9XX22系列是DFB(分布式反馈)激光二极管,发射波长为1470~1610纳米的光束,适用于长距离数字传输应用中的粗波分复用(Coarse WDM)光源。

3. 引脚分配: - ML920J11S、ML920J16S、ML920J22S的引脚连接图(顶视图)。 - ML925J11F、ML925J16F、ML925J22F的引脚连接图(顶视图)。

4. 参数特性: - 工作温度范围:0至85°C。 - 低阈值电流:典型值为8mA。 - 高速响应:典型值为0.1纳秒。 - 8种波长,1470~1610纳米范围内,每隔20纳米一个波长。 - φ5.6mm TO-CAN封装。 - 扁平窗口盖或非球面透镜盖。

5. 功能详解: - 提供了详细的电气/光学特性表,包括阈值电流、工作电流、工作电压、斜率效率、峰值波长、光束发散角、边模抑制比、上升和下降时间、监控输出电流、暗电流和电容等参数。

6. 应用信息: - 适用于1.25Gbps数字传输系统和粗波分复用应用。

7. 封装信息: - 提供了ML925B11F、ML925B16F、ML925B22F、ML920J11S、ML920J16S、ML920J22S的尺寸图。
ML920L22S-04 价格&库存

很抱歉,暂时无法提供与“ML920L22S-04”相匹配的价格&库存,您可以联系我们找货

免费人工找货