ML9XX11_04

MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML920J11S ML925AA11F / ML920AA11S ML925J11F / ML920L11S APPLICATION · ~1.25Gbps digital transmission system DESCRIPTION ML9XX11series are DFB (Distributed Feedback) laser diodes emitting light beam around 1550nm. They are well suited for light source in long distance digital transmission system. They are hermetically sealed devices with the photo diode for optical output monitoring. FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( -40 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · φ5.6mm TO-CAN package · Flat window cap, Ball lens cap, or Aspherical lens cap ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 10 150 2 20 2 -40 to +85 -40 to +100 Unit mW mA V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap ; ML925B11F / ML920J11S ] Symbol Ith Iop Vop η λp θ // θ┴ SMSR tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Side mode suppression ratio Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= - 40 to +85ºC Ib=Ith, 20-80% CW, Po=5mW VRD=5V VRD=5V Min. ----------0.20 1530 ----35 Typ. 8 30 25 60 1.1 0.28 1550 25 35 40 Max. 15 50 40 80 1.5 --1570 35 45 --Unit mA mA V mW/mA nm deg. deg. dB --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [Ball lens cap ; ML925AA11F / ML920AA11S ] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions Min. Typ. Max. Unit CW --8 15 mA --30 50 CW, Tc=85ºC CW, Po=5mW --25 40 mA --60 80 CW, Po=5mW, Tc=85ºC CW, Po=5mW --1.1 1.5 V CW, Po=5mW 0.20 0.28 --mW/mA CW, Po=5mW 1530 1550 1570 nm CW, Po=5mW 35 40 --dB Tc= - 40 to +85ºC CW, Po=5mW, SMF 0.5 1.0 --mW CW, Po=5mW, SMF 6.0 6.5 7.0 mm Ib=Ith, 20-80% --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF Except influence of the 18mm lead. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Aspherical lens cap ; ML925J11F / ML920L11S] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW mA CW, Tc=85ºC CW, Po=5mW mA CW, Po=5mW, Tc=85ºC CW, Po=5mW V CW, Po=5mW mW/mA CW, Po=5mW nm CW, Po=5mW 35 40 --dB Tc= - 40 to +85ºC CW, Po=5mW, SMF 1.5 2.0 --mW CW, Po=5mW, SMF 6.5 7.5 8.5 mm Ib=Ith, 20-80% --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF Except influence of the 18mm lead. Min. ----------0.20 1530 Typ. 8 30 25 60 1.1 0.28 1550 Max. 15 50 40 80 1.5 --1570 Unit MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES OUTLINE DRAWINGS Dimension : mm ML925B11F ML920J11S 2-90° φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) PD (1) (4) (2) Ｘ (4) (0.25) ML925B11F (3) LD 1.27 ±0.0 3 Emitting Facet 1±0.1 0.25 ±0.03 φ3.55±0.1 (Glass) φ2.0Min. φ1.0Min. Case 2.1±0.1 5 (1) PD (2) Reference Plane ±0.1 1.2 (4) 18 ±1 φ2.0 ±0.25 (P.C.D.) (1) (2) ML920J11S 4-φ0.45 ±0.05 Pin Connection ( Top view ) ML925AA11F ML920AA11S 2-90° (1) Dimension : mm φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) (3) (Dimension:mm) LD Case (1) (2) PD (2) (4) Ｘ (0.25) (4) 1±0.1 ML925AA11F (3) LD φ3.55±0.1 φ2.0±0.01 (6.7) Case 3.87 ±0.1 1.27 ±0.03 (1) Emitting Facet (2) PD (3.0) Reference Plane (4) 1.2 ML920AA11S 18 ±1 φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 Pin Connection ( Top view ) MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimension : mm InGaAsP DFB LASER DIODES ML925J11F ML920L11S Top View 2-90° φ5.6 -0.03 φ4.3 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) PD (1) (4) (2) Ｘ (0.25) (4) ML925J11F (3) 1±0.1 φ3.75±0.1 Ｚ Case LD 3.97 ±0.15 (7.51) 1.27 ±0.03 Emitting Facet (1) PD (2) Reference Plane ±0.1 1.2 (4) φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 18 ±1 ML920L11S Pin Connection ( Top view ) (1) (2) MITSUBISHI ELECTRIC Dec. 2004