MITSUBISHI PHOTO DIODES
PD739C13
InGaAs PIN PHOTO DIODES
PD739C13
DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier (TIA). This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical communication systems.
Feature
Build-in TIA Single 3.3V supply voltage for TIA Differential output Ball lens cap
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Symbol Vpd Vcc Pin Ipd Tstg PD supply voltage
Note 1)
Parameter TIA supply voltage Photo input power PD reverse current Storage temperature
Conditions -
Ratings 20 6 2.0 2.0 -40 ~ +85
Unit V V mW mA C
Note 1: The maximum rating and limitation over which the device should not be operated instant time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS Symbol Vcc Tc Parameter TIA supply voltage Case temperature Test conditions Limits Min. 3.0 -20 Typ. 3.3 Max. 5.5 +85 Unit V C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, Vpd=3.3V ,λ=1300nm)
Symbol R Icc fc in Pr Parameter Responsivity TIA consumption current Cut-off frequency Averaged equivalent input noise current density Minimum received sensitivity Test conditions RL=50Ω, Single-ended Pin=0µW RL=50Ω, -3dB, Pin=10µW Pin=0µW, f=10MHz-1.4GHz, RL=50Ω NRZ, PBS=223-1, BER=10-10, 2.488G/s, Limits Min 0.75 1.5 Typ 1.2 35 2.0 9.0 -23 Max 70 Unit kV/W mA GHz pA/ Hz1/2 dBm
MITSUBISHI ELECTRIC
(1/2) As of July ‘02
MITSUBISHI PHOTO DIODES
PD739C13
InGaAs PIN PHOTO DIODES
Outline drawing
φ5.6
PD739C13
0.18 (1) 45 30 (4)
Unit:mm The center of active diameter is 180um away from the center of stem.
(1) Vpd (2) Vcc
0.4 0.4 (2) 90+2 4.6 4.0 (3)
PD
0.5
Lead Connection 1) Vpd 2) Vcc 3) Out 4) Out 5) GND(Case)
(1) (5) (4) (2) (3) 2.54 P.C.D.
(4) OUT (3) OUT
(5) GND(Case)
5-0.45
MITSUBISHI ELECTRIC
(2/2)
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