PD839C4

MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes (APD) with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical communication systems. Feature Buit in TIA Single 3.3V supply voltage for TIA Differential output Ball lens cap APPLICATION Receiver for optical communication system ABSOLUTE MAXIMUM RATINGS Symbol Vpd Vcc Pin Ipd Tstg Note 1) Parameter APD supply voltage TIA supply voltage Photo input power APD reverse current Storage temperature Conditions - Ratings VBR 6 0.5 0.5 -40 ~ +85 Unit V V mW mA C Note 1: The maximum rating and limitation over which the device should not be operated instant time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance section. RECOMMENDED OPERATING CONDITIONS Symbol Vcc Tc Parameter TIA supply voltage Case temperature Test conditions Limits Min. 3.0 -20 Typ. 3.3 Max. 5.5 +85 Unit V C ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, λ=1550nm) Symbol VBR R Icc fc in Pr Parameter Break down voltage Responsivity TIA consumption current Cut-off frequency Averaged equivalent input noise current density Minimum received sensitivity Test conditions Id=100µΑ M=10, RL=50Ω, Single-ended Pin=0µW RL=50Ω, -3dB, M=10 Pin=0µW, f=10MHz-1.4GHz, RL=50Ω NRZ, PBS=223-1, BER=10-10, 2.488G/s, at optimum M Limits Min 40 9.5 1.5 Typ 60 15 35 2.0 9.0 -33 Max 80 70 Unit V kV/W mA GHz pA/ Hz1/2 dBm MITSUBISHI ELECTRIC (1/2) As of July ‘02 MITSUBISHI PHOTO DIODES PD839C4 InGaAs PIN PHOTO DIODES Outline drawing φ5.6 PD839C4 0.18 (1) 45 30 (4) Unit:mm The center of active diameter is 180um away from the center of stem. (1) Vpd (2) Vcc 0.4 0.4 (2) 90+2 4.6 4.0 (3) APD 0.5 Lead Connection 1) Vpd 2) Vcc 3) Out 4) Out 5) GND(Case) (1) (5) (4) (2) (3) 2.54 P.C.D. (4) OUT (3) OUT (5) GND(Case) 5-0.45 MITSUBISHI ELECTRIC (2/2)