PD8XX3

MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 FEATURES • φ35 µ m active diameter • Low noise • High speed response • Small dark current • High quantum efficiency DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications. APPLICATION Receiber for long-distance fiber-optic communication systems ABSOLUTE MAXIMUM RATING Symbol IR IF TC Tstg Parameter Reverse current Forward current Case temperature Storage temperature Conditions Ratings 500 2 -40~+85 -40~+100 Unit µA mA ˚C ˚C ELECTRICAL /OPTICAL CHARACTERISTICS Symbol V(BR)R Ct ID η fc parameter Breakdown voltage Capacitance Dark current Quantum efficiency Cutoff frequency (-3dB) (TC = 25˚C) Test conditions Limits Typ. 60 0.5 30 80 2.5 Unit V pF nA % GHz IR = 100 µ A VR = 0.9V (BR) R,f = 1MHz VR = 0.9V (BR) R M = 1, λ = 1550nm M = 10,RL = 50Ω, -3dB Min. 40 1.8 Max. 90 0.7 60 - SEP.2000 MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES OUTLINE DRAWINGS Dimension : mm PD8933 SEP.2000 MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TIPICAL CHARACTERISTICS Fig.1 Spectral response Fig.2 Dark current, photo current, and multiplication rate vs. reverse voltage Fig.3 Total capacitance vs. reserve voltage Fig.5 Multiplication rate dependence of cutoff frequency Fig.4 Frequency response SEP.2000