PS21963-4A

MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21963-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • • For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply). Input interface : 3V, 5V line (High Active). UL Approved : Yellow Card No. E80276 APPLICATION AC100V~200V three-phase inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES (PS21963-4) 38 ±0.5 20×1.778(=35.56) 35 ±0.3 A B TERMINAL CODE 3.5 16-0.5 1.5 ±0.05 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC Dimensions in mm 0.28 1.778 ±0.2 17 1 (1) 14.4 ±0.5 0.4 14.4 ±0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 29.2 ±0.5 24 ±0.5 (3.5) 0.8 HEAT SINK SIDE 12 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 0.5 0.5 0.5 25 8-0.6 4-C1.2 (3.3) 2.5 MIN 0.5 (2.656) (0~5°) 0.4 1.5 M IN 9.5±0.5 5.5±0.5 (1.2) (2.756) DETAIL A HEAT SINK SIDE (1.2) DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Aug. 2007 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21963-4A) 38 20×1.778(=35.56) 35 ±0.3 ±0.5 Dimensions in mm A B TERMINAL CODE 3.5 16-0.5 (1) 0.28 1.778 ±0.2 1.5 ±0.05 0.4 17 1 14.4 ±0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 25 8-0.6 14×2.54 (=35.56) 0.5 0.5 0.5 (2.656) 14±0.5 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 14.4 ±0.5 12 29.4 ±0.5 24 ±0.5 (3.5) (3.3) 0.5 2.5 MIN (0~5°) 5.5±0.5 (1.2) (2.756) DETAIL A HEAT SINK SIDE (1.2) *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-4C) 38 ±0.5 20×1.778(=35.56) 35 ±0.3 A B 3.5 1.5 ±0.05 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 0.4 1.5 M IN DETAIL B Dimensions in mm TERMINAL CODE NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 17 1 (1) 18.9 ±0.5 14.4 ±0.5 33.7±0.5 2- 14.4 ±0.5 12 R1 .6 QR Code 3 MIN Type name Lot No. 29.2 ±0.5 24 ±0.5 (3.5) 0.8 HEAT SINK SIDE 0.4 0.4 0.28 1.778 ±0.2 16-0.5 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 25 8-0.6 4-C1.2 0.5 0.5 0.5 (2.656) (0~5°) (0~5°) 0.4 1.5 M IN ±0.5 5.5±0.5 (1.2) (2.756) DETAIL A HEAT SINK SIDE (1.2) 9.5 DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Aug. 2007 2 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-4W) 38 20×1.778(=35.56) 35 ±0.3 ±0.5 Dimensions in mm A B 3.5 1.5 ±0.05 TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NC NC N W V U P NC 17 1 (1) 17.4 ±0.5 14.4 ±0.5 35.2 ±0.6 2- 17.4 ±0.5 14.4 ±0.5 12 R1 .6 QR Code 3 MIN Type name Lot No. 29.2 ±0.5 24 ±0.5 (3.5) 0.8 HEAT SINK SIDE (1.8) 14×2.54 (=35.56) 0.5 0.5 0.5 2.5 MIN (0~5°) 0.28 2.54 ±0.25 7-0.6 4-C1.2 (0~5°) 18 25 0.4 0.4 0.4 0.4 0.28 1.778 ±0.25 16-0.5 1.5 M (2.656) IN 11±0.5 5.5±0.5 (1.2) (2.756) DETAIL A HEAT SINK SIDE (1.2) DETAIL B *) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE) CBU– CBV– CBU+ CBW– CBV+ CBW+ C1 : Electrolytic type with good temperature and frequency characteristics (Note : The capacitance value depends on the PWM control scheme used in the applied system). C2 : 0.22~2µF R-category ceramic capacitor for noise filtering. High-side input (PWM) (3V, 5V line)(Note 1, 2) Input signal conditioning Level shifter Protection circuit (UV) Input signal conditioning Level shifter Input signal conditioning Level shifter C2 C1 (Note 6) (Note 5) Inrush current limiter circuit P Drive circuit Drive circuit Drive circuit H-side IGBTS DIP-IPM AC line input (Note 4) U V W (Note 7) M AC line output Z C VNC N1 N L-side IGBTS CIN Z : ZNR (Surge absorber) C : AC filter (Ceramic capacitor 2.2~6.5nF) (Note : Additionally, an appropriate line-to line surge absorber circuit may become necessary depending on the application environment). Drive circuit Input signal conditioning Fo logic Protection Control supply circuit Under-Voltage protection Low-side input (PWM) FO (3V, 5V line)(Note 1, 2) Fault output (5V line) (Note 3) (Note 6) VNC VD (15V line) Note1: 2: 3: 4: 5: 6: 7: Input logic is high-active. There is a 3.3kΩ (min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the input threshold voltage. By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 11) This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kΩ resistor. (see also Fig. 11) The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P & N1 DC power input pins. High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit. It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. Aug. 2007 3 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 6 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT DIP-IPM Drive circuit P Short Circuit Protective Function (SC) : SC protection is achieved by sensing the L-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is recommended to stop the system when the Fo signal is received and check the fault. IC (A) SC Protection Trip Level H-side IGBTS U V W L-side IGBTS External protection circuit N1 Shunt Resistor (Note 1) A N VNC CIN B Drive circuit Collector current waveform CR C Protection circuit (Note 2) 0 2 tw (µs) Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs. 2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible. MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES ±I C ±ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-N Applied between P-N TC = 25°C TC = 25°C, less than 1ms TC = 25°C, per 1 chip (Note 1) Ratings 450 500 600 10 20 27.0 –20~+125 Unit V V V A A W °C Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C). CONTROL (PROTECTION) PART Symbol VD VDB VIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W Applied between UP, VP, WP, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 –0.5~VD+0.5 –0.5~VD+0.5 1 –0.5~VD+0.5 Unit V V V V mA V Aug. 2007 4 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE TOTAL SYSTEM Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature TC Tstg Storage temperature Viso Isolation voltage Symbol Condition VD = 13.5~16.5V, Inverter part Tj = 125°C, non-repetitive, less than 2µs (Note 2) 60Hz, Sinusoidal, 1 minute, Between pins and heat-sink plate Ratings 400 –20~+100 –40~+125 1500 Unit V °C °C Vrms Note 2: TC measurement point Control terminals DIP-IPM 11.6mm 3mm IGBT chip position FWD chip position Power terminals TC point Heat sink side THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. — — Limits Typ. — — Max. 3.7 4.5 Unit °C/W °C/W Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM and heat-sink. The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/m·k. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-emitter saturation voltage FWD forward voltage Condition IC = 10A, Tj = 25°C VD = VDB = 15V VIN = 5V IC = 10A, Tj = 125°C Tj = 25°C, –IC = 10A, VIN = 0V VCC = 300V, VD = VDB = 15V IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V Inductive load (upper-lower arm) Collector-emitter cut-off current Tj = 25°C Tj = 125°C Min. — — — 0.60 — — — — — — Limits Typ. 1.70 1.80 1.70 1.10 0.30 0.40 1.50 0.50 — — Max. 2.20 2.30 2.20 1.70 — 0.60 2.10 0.80 1 10 Unit V V µs µs µs µs µs mA Switching times VCE = VCES Aug. 2007 5 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE CONTROL (PROTECTION) PART Symbol Parameter VD = VDB = 15V VIN = 5V VD = VDB = 15V VIN = 0V Condition Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W Total of VP1-VNC, VN1-VNC VUFB-U, VVFB-V, VWFB-W VSC = 0V, FO terminal pull-up to 5V by 10kΩ VSC = 1V, IFO = 1mA Tj = 25°C, VD = 15V (Note 4) VIN = 5V Trip level Reset level Tj ≤ 125°C Trip level Reset level (Note 5) Min. — — — — 4.9 — 0.43 0.70 10.0 10.5 10.3 10.8 20 — 0.8 0.35 Limits Typ. — — — — — — 0.48 1.00 — — — — — 2.1 1.3 0.65 Max. 2.80 0.55 2.80 0.55 — 0.95 0.53 1.50 12.0 12.5 12.5 13.0 — 2.6 — — Unit mA mA mA mA V V V mA V V V V µs V V V ID Circuit current VFOH VFOL VSC(ref) IIN UVDBt UVDBr UVDt UVDr tFO Vth(on) Vth(off) Vth(hys) Fault output voltage Short circuit trip level Input current Control supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage ON/OFF threshold hysteresis voltage Applied between UP, VP, WP, UN, VN, WN-VNC Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating. 5 : Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure. MECHANICAL CHARACTERISTICS AND RATINGS Parameter Mounting torque Condition Mounting screw : M3 Recommended : 0.69 N·m (Note 6) (Note 7) Min. 0.59 — –50 Limits Typ. — 10 — Max. 0.78 — 100 Unit N·m g µm Weight Heat-sink flatness Note 6 : Plain washers (ISO 7089~7094) are recommended. Note 7: Flatness measurement position Measurement position +– 4.6mm DIP-IPM Heat sink side – + Heat sink side Aug. 2007 6 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE RECOMMENDED OPERATION CONDITIONS Symbol VCC VD VDB ∆VD, ∆VDB tdead fPWM IO Parameter Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency Allowable r.m.s. current Condition Applied between P-N Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W For each input signal, TC ≤ 100°C TC ≤ 100°C, Tj ≤ 125°C VCC = 300V, VD = VDB = 15V, fPWM = 5kHz P.F = 0.8, sinusoidal PWM, (Note 8) fPWM = 15kHz Tj ≤ 125°C, TC ≤ 100°C (Note 9) Min. 0 13.5 13.0 –1 1.5 — — — 0.5 0.5 –5.0 Limits Typ. 300 15.0 15.0 — — — — — — — — Max. 400 16.5 18.5 1 — 20 5.0 Arms 3.0 — — 5.0 µs V Unit V V V V/µs µs kHz PWIN(on) Allowable minimum input PWIN(off) pulse width VNC variation VNC Between VNC-N (including surge) Note 8 : The allowable r.m.s. current value depends on the actual application conditions. 9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value. Fig. 7 THE DIP-IPM INTERNAL CIRCUIT VUFB HVIC IGBT1 Di1 DIP-IPM P VUB VP1 UP VNC VCC UP COM UOUT VUS U VVFB VP VVB VP IGBT2 VOUT VVS Di2 V VWFB WP VWB WP IGBT3 WOUT VWS Di3 W IGBT4 Di4 LVIC UOUT VN1 VCC IGBT5 VOUT Di5 UN VN WN Fo UN VN WN Fo WOUT CIN VNO IGBT6 Di6 VNC GND N CIN Aug. 2007 7 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 8 TIMING CHART OF THE DIP-IPM PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (Lower-side only with the external shunt resistor and CR filter) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit detection (SC trigger). a3. IGBT gate hard interruption. a4. IGBT turns OFF. a5. FO outputs (tFO(min) = 20µs). a6. Input “L” : IGBT OFF. a7. Input “H” : IGBT ON. a8. IGBT OFF in spite of input “H”. Lower-side control input Protection circuit state SET a6 a7 RESET Internal IGBT gate a2 a1 Output current Ic Sense voltage of the shunt resistor SC a3 a4 a8 SC reference voltage CR circuit time constant DELAY Error output Fo a5 [B] Under-Voltage Protection (Lower-side, UVD) b1. Control supply voltage rising : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO outputs (tFO ≥ 20µs and FO outputs continuously during UV period). b6. Under voltage reset (UVDr). b7. Normal operation : IGBT ON and carrying current. Control input Protection circuit state UVDr RESET SET RESET b6 Control supply voltage VD b1 UVDt b3 b4 b2 Output current Ic b7 Error output Fo b5 Aug. 2007 8 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE [C] Under-Voltage Protection (Upper-side, UVDB) c1. Control supply voltage rising : After the voltage level reaches UVDBr, the circuits start to operate when next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. Under voltage trip (UVDBt). c4. IGBT OFF in spite of control input signal level, but there is no FO signal outputs. c5. Under voltage reset (UVDBr). c6. Normal operation : IGBT ON and carrying current. Control input Protection circuit state UVDBr Control supply voltage VDB RESET SET RESET c1 UVDBt c5 c3 c4 c6 c2 Output current Ic High-level (no fault output) Error output Fo Fig. 9 RECOMMENDED MCU I/O INTERFACE CIRCUIT 5V line 10kΩ DIP-IPM UP,VP,WP,UN,VN,WN MCU Fo VNC(Logic) Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the wiring impedance of the printed circuit board. The DIP-IPM input section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the turn-on threshold voltage. 3.3kΩ (min) Fig. 10 WIRING CONNECTION OF SHUNT RESISTOR DIP-IPM Wiring inductance should be less than 10nH. Equivalent to the inductance of a copper pattern in dimension of width=3mm, thickness=100µm, length=17mm VNC N Shunt resistor Please make the GND wiring connection of shunt resistor to the VNC terminal as close as possible. Aug. 2007 9 MITSUBISHI SEMICONDUCTOR PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Fig. 11 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering C2 C1 C2 C1 C2 C1 VUFB HVIC VP1 C3 VCC UP VUB UOUT VUS VVFB VWFB DIP-IPM P Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. UP U VVB VP VP VOUT VVS V M VWB WP VNC WP WOUT Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ. 4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4. 6 : All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended. 8 : Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. 9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point. Aug. 2007 10 MCU 5V line C3 15V line COM VWS W LVIC UOUT VN1 VCC VOUT UN VN WN Fo UN VN WN Fo WOUT Long wiring here might cause short-circuit. N VNC GND C CIN Long GND wiring here might generate noise to input and cause IGBT malfunction. B C4 A R1 Shunt resistor N1 Long wiring here might cause SC level fluctuation and malfunction.