PS21963-ST_09

MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE PS21963-ST INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • • For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT). Fault signaling : Corresponding to an SC fault (Lower-leg IGBT), a UV fault (Lower-side supply) or an OT fault (LVIC temperature). Input interface : 3V, 5V line (High Active). UL Approved : Yellow Card No. E80276 APPLICATION AC100V~200V inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES 38 ±0.5 20×1.778 (=35.56 ) 35 ±0.3 A 16-0.5 1 (1) Dimensions in mm B 0.4 3.5 1.5 ±0.05 TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NW NV NU W V U P NC 0.28 1.778 ±0.2 17 14.4 ±0.5 (3.5) 33.7 ±0.5 18.9 ±0.5 14.4 ±0.5 212 R1 .6 QR Code Type name Lot No. 3 MIN 29.2 ±0.5 24 ±0.5 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 25 14×2.54 (=35.56) 0.5 0.5 0.5 4-C1.2 0.4 8-0.6 0.5 2.5 MIN (2.656) (0°~5°) (3.3) 1.5m in 9.5 ±0.5 (1.2) (1.2) (2.756) DETAIL A DETAIL B HEAT SINK SIDE *) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and QR Code is registered trademark of DENSO WAVE INCORPORATED in Japan and other countries. leave another one open. 5.5 ±0.5 Mar. 2009 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCC VCC(surge) VCES ± IC ±ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-NU, NV, NW Applied between P-NU, NV, NW TC = 25°C TC = 25°C, less than 1ms TC = 25°C, per 1 chip (Note 1) Ratings 450 500 600 10 20 27.0 –20~+125 Unit V V V A A W °C Note 1 : The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@ TC ≤ 100°C). However, to ensure safe operation of the DIPIPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C). CONTROL (PROTECTION) PART Symbol VD VDB VIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W Applied between UP, VP, WP, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 –0.5~VD+0.5 –0.5~VD+0.5 1 –0.5~VD+0.5 Unit V V V V mA V TOTAL SYSTEM Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature TC Tstg Storage temperature Viso Isolation voltage Symbol Condition VD = 13.5~16.5V, Inverter part Tj = 125°C, non-repetitive, less than 2µs (Note 2) 60Hz, Sinusoidal, 1 minute, Between pins and heat-sink plate Ratings 400 –20~+100 –40~+125 1500 Unit V °C °C Vrms Note 2: TC measurement point Control terminals 11.6mm 3mm IGBT chip position FWD chip position Power terminals TC point Heat sink side Mar. 2009 2 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. — — Limits Typ. — — Max. 3.7 4.5 Unit °C/W °C/W Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/m·k. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-emitter saturation voltage FWD forward voltage Condition VD = VDB = 15V IC = 10A, Tj = 25°C VIN = 5V IC = 10A, Tj = 125°C Tj = 25°C, –IC = 10A, VIN = 0V VCC = 300V, VD = VDB = 15V IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V Inductive load (upper-lower arm) Tj = 25°C Tj = 125°C Min. — — — 0.60 — — — — — — Limits Typ. 1.70 1.80 1.70 1.10 0.30 0.40 1.50 0.50 — — Max. 2.20 2.30 2.20 1.70 — 0.60 2.10 0.80 1 10 Unit V V µs µs µs µs µs mA Switching times Collector-emitter cut-off current VCE = VCES CONTROL (PROTECTION) PART Symbol Parameter Condition Total of VP1-VNC, VN1-VNC VD = VDB = 15V VIN = 5V VUFB-U, VVFB-V, VWFB-W Total of VP1-VNC, VN1-VNC VD = VDB = 15V VIN = 0V VUFB-U, VVFB-V, VWFB-W VSC = 0V, FO terminal pull-up to 5V by 10kΩ VSC = 1V, IFO = 1mA Tj = 25°C, VD = 15V (Note 4) VIN = 5V Trip level VD = 15V, At temperature of LVIC Trip/reset hysteresis Trip level Reset level Tj ≤ 125°C Trip level Reset level (Note 6) Min. — — — — 4.9 — 0.43 0.70 100 — 10.0 10.5 10.3 10.8 20 — 0.8 0.35 Limits Typ. — — — — — — 0.48 1.00 120 10 — — — — — 2.1 1.3 0.65 Max. 2.80 0.55 2.80 0.55 — 0.95 0.53 1.50 140 — 12.0 12.5 12.5 13.0 — 2.6 — — Unit ID Circuit current mA VFOH VFOL VSC(ref) IIN OTt OTrh UVDBt UVDBr UVDt UVDr tFO Vth(on) Vth(off) Vth(hys) Fault output voltage Short circuit trip level Input current Over temperature protection (Note 5) Control supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage ON/OFF threshold hysteresis voltage V V V mA °C V V V V µs V V V Applied between UP, VP, WP, UN, VN, WN-VNC Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating. 5 : Over temperature protection (OT) outputs fault signal, when the LVIC temperature exceeds OT trip temperature level (OTt). In that case if the heat sink comes off DIPIPM or fixed loosely, don’t reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj (150°C)). 6 : Fault signal is asserted only corresponding to a SC, a UV or an OT failure at lower side, and the FO pulse width is different for each failure modes. For SC failure, FO output is with a fixed width of 20µsec(min), but for UV or OT failure, FO output continuously during the whole UV or OT period, however, the minimum FO pulse width is 20µsec(min) for very short UV or OT period less than 20µsec. Mar. 2009 3 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE MECHANICAL CHARACTERISTICS AND RATINGS Parameter Mounting torque Condition Mounting screw : M3 Recommended : 0.69 N·m (Note 7) (Note 8) Min. 0.59 — –50 Limits Typ. — 10 — Max. 0.78 — 100 Unit N·m g µm Weight Heat-sink flatness Note 7 : Plain washers (ISO 7089~7094) are recommended. Note 8: Flatness measurement position Measurement position +– 4.6mm Heat sink side – + Heat sink side RECOMMENDED OPERATION CONDITIONS Symbol VCC VD VDB ∆VD, ∆VDB tdead fPWM IO Parameter Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency Allowable r.m.s. current Condition Applied between P-NU, NV, NW Applied between VP1-VNC, VN1-VNC Applied between VUFB-U, VVFB-V, VWFB-W For each input signal, TC ≤ 100°C TC ≤ 100°C, Tj ≤ 125°C VCC = 300V, VD = VDB = 15V, fPWM = 5kHz P.F = 0.8, sinusoidal PWM, (Note 9) fPWM = 15kHz Tj ≤ 125°C, TC ≤ 100°C Min. 0 13.5 13.0 –1 1.5 — — — Limits Typ. 300 15.0 15.0 — — — — — — — — Max. 400 16.5 18.5 1 — 20 5.0 Arms 3.0 — — 5.0 µs V Unit V V V V/µs µs kHz 0.5 PWIN(on) Allowable minimum input 0.5 PWIN(off) pulse width (Note 10) VNC variation –5.0 VNC Between VNC-NU, NV, NW (including surge) Note 9 : The allowable r.m.s. current value depends on the actual application conditions. 10 : IPM might not make response if the input signal pulse width is less than the recommended minimum value. Mar. 2009 4 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE Fig. 2 THE DIPIPM INTERNAL CIRCUIT VUFB HVIC P VUB VP1 UP VNC VCC IGBT1 Di1 UP COM UOUT VUS U VVFB VP VVB VP IGBT2 VOUT VVS Di2 V VWFB WP VWB WP IGBT3 WOUT VWS Di3 W IGBT4 Di4 LVIC UOUT VN1 VCC NU IGBT5 VOUT Di5 UN VN WN Fo UN VN WN Fo WOUT CIN VNO NV IGBT6 Di6 NW VNC GND CIN Mar. 2009 5 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE Fig. 3 TIMING CHART OF THE DIPIPM PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (Lower-side only with the external shunt resistor and CR filter) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit detection (SC trigger). a3. IGBT gate hard interruption. a4. IGBT turns OFF. a5. FO outputs (tFO(min) = 20µs). a6. Input “L” : IGBT OFF. a7. Input “H” : IGBT ON. a8. IGBT OFF in spite of input “H”. Lower-side control input Protection circuit state SET a6 a7 RESET Internal IGBT gate a2 a1 Output current Ic Sense voltage of the shunt resistor SC a3 a4 a8 SC reference voltage CR circuit time constant DELAY Error output Fo a5 [B] Under-Voltage Protection (Lower-side, UVD) b1. Control supply voltage rising : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO outputs (tFO ≥ 20µs and FO outputs continuously during UV period). b6. Under voltage reset (UVDr). b7. Normal operation : IGBT ON and carrying current. Control input Protection circuit state UVDr RESET SET RESET b6 Control supply voltage VD b1 UVDt b3 b4 b2 Output current Ic b7 Error output Fo b5 Mar. 2009 6 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE [C] Under-Voltage Protection (Upper-side, UVDB) c1. Control supply voltage rising : After the voltage level reaches UVDBr, the circuits start to operate when next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. Under voltage trip (UVDBt). c4. IGBT OFF in spite of control input signal level, but there is no FO signal outputs. c5. Under voltage reset (UVDBr). c6. Normal operation : IGBT ON and carrying current. Control input Protection circuit state UVDBr Control supply voltage VDB RESET SET RESET c1 UVDBt c5 c3 c4 c6 c2 Output current Ic High-level (no fault output) Error output Fo [D] Over Temperature Protection (Lower-side, OT) d1. Normal operation : IGBT ON and carrying current. d2. LVIC temperature exceeds over temperature trip level (OTt). d3. IGBT OFF in spite of control input condition. d4. FO outputs during over temperature period, however, the minimum pulse width is 20µs. d5. LVIC temperature becomes under over temperature reset level. d6. Circuits start to operate normally when next input is applied. Control input Protection circuit state SET OTt RESET d2 OTrh d1 Output current Ic d3 d6 d5 LVIC temperature Fault output Fo d4 Fig. 4 RECOMMENDED MCU I/O INTERFACE CIRCUIT 5V line 10kΩ DIPIPM UP,VP,WP,UN,VN,WN MCU Fo VNC(Logic) 3.3kΩ (min) Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the wiring impedance of the printed circuit board. The DIPIPM input section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the turn-on threshold voltage. Fig. 5 WIRING CONNECTION OF SHUNT RESISTOR DIPIPM Each wiring inductance should be less than 10nH. Equivalent to the inductance of a copper pattern in dimension of width=3mm, thickness=100µm, length=17mm VNC NU NV NW Shunt resistors Please make the GND wiring connection of shunt resistor to the VNC terminal as close as possible. Mar. 2009 7 MITSUBISHI SEMICONDUCTOR PS21963-ST TRANSFER-MOLD TYPE INSULATED TYPE Fig. 6 AN EXAMPLE OF TYPICAL DIPIPM APPLICATION CIRCUIT C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering C2 C1 C2 C1 C2 C1 Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. VUFB HVIC VP1 C3 VCC UP VUB UOUT VUS VVFB VWFB P UP U VVB VP VP VOUT VVS V M VWB WP VNC WP COM WOUT VWS W Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ. 4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4. 6 : All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended. 8 : Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. 9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point. 11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V). 12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V). Mar. 2009 8 MCU VN1 5V line C3 VCC LVIC UOUT NU VOUT UN VN WN Fo UN VN WN WOUT Fo CIN VNO NV NW C VNC GND Long wiring here might cause short-circuit. C IN 15V line Long GND wiring here might generate noise to input and cause IGBT malfunction. Long wiring here might cause SC level fluctuation and malfunction. A + + OR Logic + Vref Vref Vref B R1 C4 B R1 C4 B R1 C4 N1 Shunt resistors Comparator External protection circuit