RA01L9595M

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M BLOCK DIAGRAM 2 3 RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA. 1 4 5 1 2 3 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground FEATURES • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=3.3V, VGG=0V) • Pout>1.4W , ηT>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW • Frequency Range: 952-954MHz • Low-Power Control Current IGG=1mA (typ) at VGG=2.0V • Module Size: 9.1 x 9.2 x 1.8 mm 4 5 PACKAGE CODE: H58 RoHS COMPLIANCE • RA01L9595M -101 is a RoHS compliance products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA01L9595M -101 SUPPLY FORM Antistatic tray, 168 modules/tray RA01L9595M 22 Jun 2010 1/13 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RoHS COMPLIANT RA01L9595M MAXIMUM RATINGS (Tcase=+25deg.C. unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range f=952-954MHz, VGG