RA03M4547MD-101

RA03M4547MD-101

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA03M4547MD-101 - RF MOSFET MODULE 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO - Mitsubis...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA03M4547MD-101 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD BLOCK DIAGRAM 2 3 4 RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 450 to 470 MHz range. 1 5 6 FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>38dBm @ VDD=7.2V, Pin=19dBm Idq1=30mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.) , @ VDD=7.2V, Pout=38dBm (Pin adjust.), Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) • IMD334% 1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg1) 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg2) 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANT • RA03M4547MD-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA03M4547MD-101 SUPPLY FORM Antistatic tray, 25 modules/tray RA03M4547MD MITSUBISHI ELECTRIC 1/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG1 VGG2 Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA03M4547MD-101
1. 物料型号:RA03M4547MD 2. 器件简介: - RA03M4547MD是一款38dBm输出功率的射频MOSFET放大器模块,适用于7.2伏特的便携式无线电设备,覆盖450到470MHz频段。 3. 引脚分配: - 1 RF输入 (Pin) - 2 第一阶段门极偏置直流供电终端(Vgg1) - 3 最后阶段门极偏置直流供电终端(Vgg2) - 4 漏极电压 (VDD),电池 - 5 RF输出 (Pout) - 6 RF地 (Case) 4. 参数特性: - 增强模式MOSFET晶体管 - 输出功率大于38dBm @ 7.2V供电,输入功率19dBm - 总效率大于34% @ 7.2V供电,输出功率38dBm - IMD3小于-25dBc @ 7.2V供电,平均输出功率35dBm - 宽带频率范围:450-470MHz - 低功耗调整电流IGG=1mA (典型值) @ 3.5V - 模块尺寸:30 x 10 x 5.4 mm 5. 功能详解: - 该模块为7.2V便携式无线电提供38dBm的RF放大,具有高效率和宽带宽。 - 通过调整Vgg1和Vgg2可以调整漏极电流,以优化线性。 - 模块设计满足RoHS标准。 6. 应用信息: - 主要应用于450-470MHz频段的便携式无线电设备。 7. 封装信息: - 封装代码:H46S - 尺寸:30 x 10 x 5.4 mm
RA03M4547MD-101 价格&库存

很抱歉,暂时无法提供与“RA03M4547MD-101”相匹配的价格&库存,您可以联系我们找货

免费人工找货