RA05H8693M

RA05H8693M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA05H8693M - 866-928MHz 5W 14V, 3 Stage Amp. - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RA05H8693M 数据手册
Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M BLOCK DIAGRAM RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=14V, VGG=0V) • Pout>5W, IT
RA05H8693M 价格&库存

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