0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RA05H8693M_10

RA05H8693M_10

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA05H8693M_10 - 866-928MHz 5W 14V, 3 Stage Amp. - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RA05H8693M_10 数据手册
Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M BLOCK DIAGRAM RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=14V, VGG=0V) • Pout>5W, IT
RA05H8693M_10 价格&库存

很抱歉,暂时无法提供与“RA05H8693M_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货