RA05H9595M_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M BLOCK DIAGRAM RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. 2 3 1 4 5 1 2 3 4 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=14V, VGG=0V) • Pout>5W, IT