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RA07M0608M-101

RA07M0608M-101

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA07M0608M-101 - 66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO - Mitsubishi Electric Semiconduct...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA07M0608M-101 数据手册
Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RA07M0608 RA07M0608M BLOCK DIAGRAM 2 3 RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW • ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW • Broadband Frequency Range: 66-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANCE • RA07M0608M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA07M0608M-101 SUPPLY FORM Antistatic tray, 50 modules/tray RA07M0608M 30 Jun 2010 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RoHS COMPLIANCE RA07M0608M RA07M0608 RA07M0608M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range f=66-88MHz, ZG=ZL=50Ω CONDITIONS VGG=0V, Pin=0W VGG
RA07M0608M-101
1. 物料型号: - 型号为RA07M0608M。

2. 器件简介: - RA07M0608M是一款7瓦RF MOSFET放大器模块,适用于7.2伏便携式收音机,工作频率范围在66-88MHz。该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。

3. 引脚分配: - RF输入(P_in) - 栅极电压(VGG),功率控制 - 漏极电压(VDD),电池 - RF输出(P_out) - RF地(Case)

4. 参数特性: - 漏极电压(VDD):12V(VGG=0V时)和9.2V(VGG<5V时) - 栅极电压(VGG):5.5V - 输入功率(Pin):50mW - 输出功率(Pout):10W - 工作案例温度范围:-30至+90摄氏度 - 存储温度范围:-40至+110摄氏度

5. 功能详解: - 该模块使用增强型MOSFET晶体管,具有宽带频率范围和低功耗控制电流。在VGG=5V时,典型栅极电流为1mA。模块大小为30 x 10 x 5.4 mm。

6. 应用信息: - 该模块适用于7W输出功率、7.2V供电电压和30mW输入功率的应用场合。模块的总效率大于45%,在6W输出功率下(VGG控制),漏极电压为7.2V,输入功率为30mW。

7. 封装信息: - 封装代码:H46S - 订购信息:RA07M0608M-101,防静电托盘,每盘50个模块。
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