RA07M3340M-01

RA07M3340M-01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA07M3340M-01 - MITSUBISHI RF MOSFET MODULE - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA07M3340M-01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M B LOCK DIAGRAM 2 3 3 30-400MHz 7 W 7 .2V, 2Stage Amp. For PORTABLE RADIO D ESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V) • Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW • ηT>40% @ Pout=6.5W (V GG control), VDD=7.2V, Pin=50mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) P ACKAGE CODE: H46S O RDERING INFORMATION: ORDER NUMBER RA07M3340M-E01 RA07M3340M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 25 modules/tray RA07M3340M MITSUBISHI ELECTRIC 1/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07M3340M RATING 9.2 4 70 10 -30 to +90 -40 to +110 UNIT V V mW W °C °C M AXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA07M3340M-01
物料型号: - 型号:RA07M3340M - 订购编号:RA07M3340M-E01 和 RA07M3340M-01(日本包装,不含干燥剂)

器件简介: - RA07M3340M是一款7瓦特RF MOSFET放大器模块,适用于7.2伏特的便携式无线电设备,工作频率范围为330至400MHz。该模块可以直接将电池连接到增强型MOSFET晶体管的漏极。在没有栅极电压时,漏极和RF输入信号只有很小的漏电流,信号衰减高达60dB。随着栅极电压的增加,输出功率和漏极电流增加。在栅极电压约为2.5V时,输出功率和漏极电流显著增加。在3V(典型)和3.5V(最大)时,可以获得标称输出功率。在V_{GG}=3.5V时,典型的栅极电流为1mA。

引脚分配: - RF输入(P_{in}) - 栅极电压(VGG),功率控制 - 漏极电压(VDD),电池 - RF输出(P_{out}) - RF地(Case)

参数特性: - 工作频率范围:330-400MHz - 在V_{DD}=7.2V,V_{GG}=3.5V,P_{in}=50mW条件下,输出功率P_{out}>7W - 总效率η_{T}>40%,在P_{out}=6.5W(V_{Ga}控制),V_{DD}=7.2V,P_{in}=50mW条件下 - 栅极控制电流I_{KGG}=1mA(典型值)在V_{GG}=3.5V时 - 模块尺寸:30 x 10 x 5.4 mm

功能详解: - 该模块设计用于非线性FM调制,但也可以通过设置栅极电压下的漏极静态电流,并用输入功率控制输出功率来实现线性调制。

应用信息: - 适用于7.2V便携式无线电设备,工作在330至400MHz频段。

封装信息: - 封装代码:H46S - 尺寸:30 x 10 x 5.4 mm
RA07M3340M-01 价格&库存

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