RA07M3340M

RA07M3340M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA07M3340M - RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO - Mitsubishi Elect...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA07M3340M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M BLOCK DIAGRAM 2 3 RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW • ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANCE • RA07M3340M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA07M3340M-101 SUPPLY FORM Antistatic tray, 25 modules/tray RA07M3340M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA07M3340M RATING 9.2 4 70 10 -30 to +90 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA07M3340M
物料型号: - 型号为RA07M3340M。

器件简介: - RA07M3340M是一款7瓦RF MOSFET放大器模块,适用于330-400MHz频段,设计用于7.2伏便携式收音机。该模块可以直接将电池连接到增强型MOSFET晶体管的漏极。在没有栅极电压时,漏极和RF输入信号的衰减量可达60dB。随着栅极电压的增加,输出功率和漏极电流增加。在栅极电压约为2.5V时,输出功率和漏极电流显著增加。在3V(典型)和3.5V(最大)时,可以获得标称输出功率。在V_GG=3.5V时,典型的栅极电流为1mA。

引脚分配: - 1. RF输入 (P_in) - 2. 栅极电压 (V_GG) - 3. 漏极电压 (V_DD) - 4. RF输出 (P_out) - 5. RF地 (Case)

参数特性: - 输出功率大于7W,在7.2V供电和3.5V栅极电压下,输入功率为50mW时。 - 总效率大于40%,在输出功率为6.5W(栅极电压控制),7.2V供电和输入功率为50mW时。 - 宽带频率范围330-400MHz。 - 低功耗控制电流I_GG,在3.5V栅极电压下典型值为1mA。 - 模块尺寸为30 x 10 x 5.4 mm。

功能详解: - 该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。 - 模块由基板和铜法兰焊接而成,MOSFET晶体管芯片贴装在金属上,并通过树脂覆盖。基板上的线(最终形成电感)、芯片电容器和电阻器构成偏置和匹配电路。焊接在基板上的引线提供直流和射频连接。

应用信息: - 输出功率控制:根据线性要求,推荐使用以下两种方法控制输出功率: a) 非线性FM调制:通过栅极电压(V_GG)控制。 b) 线性AM调制:通过RF输入功率(P_in)控制。

封装信息: - 封装代码:H46S。 - 模块尺寸:30 x 10 x 5.4 mm。
RA07M3340M 价格&库存

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