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RA07N3340M-01

RA07N3340M-01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA07N3340M-01 - 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO - Mitsubishi Electric Semicondu...

  • 数据手册
  • 价格&库存
RA07N3340M-01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M BLOCK DIAGRAM 2 3 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S ORDERING INFORMATION: ORDER NUMBER RA07N3340M-01 SUPPLY FORM Antistatic tray, 25 modules/tray RA07N3340M MITSUBISHI ELECTRIC 1/9 5 April 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE R A07N3340M RATING 16 13.2 4 30 10 -30 to +90 -40 to +110 UNIT V V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG=0V, Pin=0W VGG
RA07N3340M-01 价格&库存

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