RA07N4452M-E01

RA07N4452M-E01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA07N4452M-E01 - 440-520MHz 7.5W 9.6V PORTABLE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA07N4452M-E01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4452M 440-520MHz 7.5W 9.6V PORTABLE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA07N4452M-E01 RA07N4452M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 25 modules/tray RA07N4452M MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07N4452M RATING 12.5 4 30 10 -30 to +90 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise s pecified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA07N4452M-E01
物料型号: - 型号为RA07N4452M。

器件简介: - RA07N4452M是一款7.5瓦射频MOSFET放大模块,适用于9.6伏特的便携式无线电设备,工作频率范围在440至520MHz。

引脚分配: - 1. RF输入(Pin) - 2. 栅极电压(VGG) - 3. 漏极电压(VDD) - 4. RF输出(Pout) - 5. RF地(Case)

参数特性: - 最大漏极电压(VoD):12.5V - 最大栅极电压(VGG):4V - 最大输入功率(Pin):30mW - 最大输出功率(Pout):10W - 工作壳体温度范围(Tcase(OP)):-30至+90°C - 存储温度范围(Tstg):-40至+110°C

功能详解: - 该模块设计用于非线性FM调制,但也可以用于线性调制,通过栅极电压设置漏极静态电流,并用输入功率控制输出功率。 - 在VGG=3.5V时,典型栅极电流为1mA。 - 模块尺寸为30 x 10 x 5.4 mm。

应用信息: - 该模块由一个氧化铝基板焊接在一个铜法兰上,为了机械保护,用硅胶附着一个塑料盖。 - MOSFET晶体管芯片粘贴在金属上,线键合到基板上,并涂覆树脂。 - 基板上的线条(最终电感)、芯片电容器和电阻器形成偏置和匹配电路。 - 焊接在氧化铝基板上的引线提供直流和射频连接。

封装信息: - 模块尺寸为30 x 10 x 5.4 mm。
RA07N4452M-E01 价格&库存

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