RA08H1317M

RA08H1317M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA08H1317M - RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO - Mitsubishi Ele...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA08H1317M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW • ηT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANCE • RA08H1317M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA08H1317M-101 SUPPLY FORM Antistatic tray, 25 modules/tray RA08H1317M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA08H1317M RATING 16 13.2 4 40 10 -30 to +90 -40 to +110 UNIT V V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG=0V, Pin=0W VGG
RA08H1317M
物料型号: - 型号为RA08H1317M,由三菱电机生产。

器件简介: - RA08H1317M是一款8瓦射频MOSFET放大模块,适用于12.5伏特的便携式无线电设备,工作频率范围为135至175MHz。

引脚分配: - 1. RF输入 (P_in) - 2. 栅极电压 (VGG) - 3. 漏极电压 (VDD) - 4. RF输出 (P_out) - 5. RF地 (Case)

参数特性: - 最大漏极电压 (VDD):16V - 最大栅极电压 (VGG):4V - 最大输入功率 (Pin):40mW - 最大输出功率 (Pout):10W - 工作温度范围:-30至+90°C - 存储温度范围:-40至+110°C

功能详解: - 该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。 - 输出功率和漏极电流随栅极电压增加而增加,典型工作栅极电压为3V至3.5V。 - 该模块对静电敏感,需要采取适当的静电放电预防措施。

应用信息: - 适用于需要高效率和宽带频率范围的便携式无线电设备。 - 需要遵守适当的安装、焊接和去焊操作,以避免损坏模块。 - 需要考虑热设计,以确保模块在长期运行中的可靠性。

封装信息: - 模块尺寸为30 x 10 x 5.4 mm,封装代码为H46S。
RA08H1317M 价格&库存

很抱歉,暂时无法提供与“RA08H1317M”相匹配的价格&库存,您可以联系我们找货

免费人工找货