RA13H1317M

RA13H1317M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA13H1317M - RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO - Mitsubishi Elec...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA13H1317M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175 MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA13H1317M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA13H1317M-101 SUPPLY FORM Antistatic tray, 10 modules/tray RA13H1317M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA13H1317M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA13H1317M
物料型号: - 型号:RA13H1317M

器件简介: - RA13H1317M是一款适用于12.5伏特移动无线电的13瓦射频MOSFET放大模块,工作频率范围为135至175MHz。

引脚分配: - 1. RF输入 (P_in) - 2. 栅极电压 (VGG) - 3. 漏极电压 (VDD) - 4. RF输出 (P_out) - 5. RF地 (Case)

参数特性: - 工作频率范围:135-175 MHz - 输出功率:在12.5V供电和5V栅极电压下,输出功率大于13W - 总效率:在12.5V供电和5V栅极电压下,总效率大于40% - 栅极电流:在5V栅极电压下,典型值为1mA - 模块尺寸:66 x 21 x 9.88 mm

功能详解: - 该模块设计用于非线性FM调制,但也可以通过设置栅极电压来控制漏极静态电流,并用输入功率控制输出功率,从而实现线性调制。 - 栅极电压增加时,输出功率和漏极电流增加。在4V栅极电压时,输出功率和漏极电流显著增加,在4.5V(典型)和5V(最大)时,可以获得标称输出功率。

应用信息: - 适用于移动无线电,也可用于基站等需要射频放大的应用场合。 - 需要考虑ESD保护、热管理、机械应力等因素。

封装信息: - 封装代码:H2S - 模块尺寸:66 x 21 x 9.88 mm - 包装形式:防静电托盘,每盘10个模块
RA13H1317M 价格&库存

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