RA13H3340M-E01

RA13H3340M-E01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA13H3340M-E01 - 330-400MHz 13W 12.5V MOBILE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA13H3340M-E01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V) • Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA13H3340M-E01 RA13H3340M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA13H3340M MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA13H3340M RATING 17 6 100 20 -30 to +110 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA13H3340M-E01
物料型号: - 型号为RA13H3340M。

器件简介: - RA13H3340M是一款13瓦的RF MOSFET放大器模块,适用于12.5伏特的移动无线电设备,工作频率范围在330至400MHz。

引脚分配: - RF输入(Pin) - 栅极电压(VGG),功率控制 - 漏极电压(VDD),电池 - RF输出(Pout) - RF地(Case)

参数特性: - 最大漏极电压(VoD):17V - 最大栅极电压(VGG):6V - 输入功率(Pin):100mW - 输出功率(Pout):20W - 工作壳体温度范围(Tcase(OP)):-30至+110°C - 存储温度范围(Tsig):-40至+110°C

功能详解: - 该模块设计用于非线性FM调制,但也可以用于线性调制,通过栅极电压设置漏极静态电流,并用输入功率控制输出功率。 - 在VGG=5V时,典型栅极电流为1mA。 - 模块尺寸为66 x 21 x 9.88 mm。

应用信息: - 该模块由铝基板焊接在铜法兰上,为机械保护,用硅胶附着塑料帽。 - MOSFET晶体管芯片贴装在金属上,线键合到基板,并涂覆树脂。 - 基板上的线条(最终电感)、芯片电容器和电阻器形成偏置和匹配电路。 - 焊接在基板上的引线提供直流和射频连接。

封装信息: - 封装尺寸为66 x 21 x 9.88 mm。
RA13H3340M-E01 价格&库存

很抱歉,暂时无法提供与“RA13H3340M-E01”相匹配的价格&库存,您可以联系我们找货

免费人工找货