RA13H3340M

RA13H3340M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA13H3340M - RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO - Mitsubishi Elec...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA13H3340M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M BLOCK DIAGRAM 2 3 RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA13H3340M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA13H3340M-101 SUPPLY FORM Antistatic tray, 10 modules/tray RA13H3340M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA13H3340M RATING 17 6 100 20 -30 to +110 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA13H3340M
### 物料型号 - 型号:RA13H3340M

### 器件简介 - 描述:RA13H3340M是一款13瓦特的RF MOSFET放大器模块,适用于12.5伏特的移动无线电设备,操作频率范围在330至400MHz。

### 引脚分配 - RF输入:P_in - 门极电压:VGG - 漏极电压:VDD - RF输出:P_out - RF地(外壳):5 RF Ground (Case)

### 参数特性 - 最大额定值: - 漏极电压 (VDD):17V - 门极电压 (VGG):6V - 输入功率 (Pin):100mW - 输出功率 (Pout):20W - 工作外壳温度范围:-30至+110°C - 存储温度范围:-40至+110°C - 电气特性(T_case=+25°C,Z_G=Z_L=50Ω): - 频率范围:330至400MHz - 输出功率:在VDD=12.5V,VGG=5V,Pin=50mW条件下,最小值为13W - 总效率:40% - 二次谐波:-30dBc - 输入VSWR:3:1 - 门极电流 (IGG):最小值为1mA

### 功能详解 - 模块设计:该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。 - 功率控制:通过门极电压(VGG)控制输出功率,或通过RF输入功率(Pin)进行线性AM调制控制。

### 应用信息 - 应用:适用于移动无线电设备,特别是在330至400MHz频段。 - ESD敏感性:对静电放电敏感,需采取适当的ESD预防措施。 - 安装:需确保散热器平整度小于50微米,并推荐使用导热化合物以降低热接触电阻和减轻陶瓷基板的弯曲应力。

### 封装信息 - 封装代码:H2S - 模块尺寸:66 x 21 x 9.88 mm
RA13H3340M 价格&库存

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