RA30H1317M-01

RA30H1317M-01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA30H1317M-01 - 135-175MHz 30W 12.5V MOBILE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA30H1317M-01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA30H1317M-E01 RA30H1317M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA30H1317M MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE H ANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H 1317M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA30H1317M-01
### 物料型号 - 型号:RA30H1317M

### 器件简介 - RA30H1317M是一款30瓦射频MOSFET放大器模块,适用于12.5伏特的移动无线电设备,工作频率范围为135至175MHz。

### 引脚分配 - 1 RF输入 (Pin) - 2 栅极电压 (VGG) - 3 漏极电压 (VDD) - 4 RF输出 (Pout) - 5 RF地 (Case)

### 参数特性 - 最大漏极电压 (VoD):17V - 最大栅极电压 (VGG):6V - 输入功率 (Pin):100mW - 输出功率 (Pout):45W - 工作案例温度范围:-30至+110°C - 存储温度范围:-40至+110°C

### 功能详解 - 该模块设计用于非线性FM调制,但也可以用于线性调制,通过栅极电压设置漏极静态电流,并用输入功率控制输出功率。 - 增强型MOSFET晶体管,当VDD=12.5V,VGG=5V,Pin=50mW时,输出功率大于30W,总效率大于40%。 - 工作频率范围为135-175MHz。 - 栅极控制电流IGG典型值为1mA(在VGG=5V时)。 - 模块尺寸为66 x 21 x 9.88 mm。

### 应用信息 - 该模块由铝基板焊接在铜法兰上构成,为机械保护,用硅胶附着塑料帽。MOSFET晶体管芯片贴装在金属上,线键合到基板,并涂覆树脂。 - 避免对基板施加弯曲力、对引线施加机械应力、与MOSFET芯片上的树脂涂层反应的去焊剂、频繁开关导致的树脂热膨胀以及静电放电、浪涌和过电压。 - 该模块对静电放电敏感,需采取适当的静电放电预防措施。 - 散热器平面度必须小于50微米,建议在模块和散热器之间使用导热膏以降低热接触电阻,并减少由温差引起的基板弯曲应力。 - 模块必须先固定在散热器上,然后才能将引线焊接到印刷电路板上,推荐使用M3螺钉,拧紧扭矩为0.4至0.6 Nm。 - 该模块设计为手动焊接,焊接引线的温度必须低于260°C,最多10秒,或低于350°C,最多三秒。推荐使用乙醇去除焊剂,不得使用三氯乙烯溶剂。

### 封装信息 - 封装尺寸:66 x 21 x 9.88 mm
RA30H1317M-01 价格&库存

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