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RA30H1317M

RA30H1317M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA30H1317M - RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO - Mitsubishi Elect...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA30H1317M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA30H1317M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA30H1317M-101 SUPPLY FORM Antistatic tray, 10 modules/tray RA30H1317M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H1317M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA30H1317M
### 物料型号 - 型号:RA30H1317M

### 器件简介 - RA30H1317M是一款适用于12.5伏特移动无线电的30瓦RF MOSFET放大器模块,工作频率范围为135至175MHz。

### 引脚分配 - Drain(漏极):连接电池,增强型MOSFET晶体管的漏极。 - Gate(栅极):控制电压输入,影响漏极电流和输出功率。 - RF Input(射频输入):输入信号。 - RF Output(射频输出):输出信号。 - 5 RF Ground(案例):射频接地。

### 参数特性 - 最大漏极电压(VpD):17V(VGG<5V) - 最大栅极电压(VGG):6V(VDD<12.5V, Pn=0mW) - 最大输入功率(Pin):100mW(f=135-175MHz) - 最大输出功率(Pout):45W(ZG=Z=50Ω) - 工作温度范围(Tcase(OP)):-30至+110°C - 存储温度范围(Tstg):-40至+110°C

### 功能详解 - 非线性FM调制设计:该模块设计用于非线性FM调制,但也可以通过设置栅极电压来控制漏极静态电流,并通过输入功率控制输出功率,实现线性调制。 - 效率:在12.5V供电和5V栅极电压下,输出功率超过30W,总效率大于40%。 - 二次谐波:-25dBc。

### 应用信息 - 移动无线电放大:适用于135至175MHz频段的12.5V移动无线电放大。

### 封装信息 - 封装代码:H2S - 模块尺寸:66 x 21 x 9.88 mm
RA30H1317M 价格&库存

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