RA30H4047M-E01

RA30H4047M-E01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA30H4047M-E01 - 400-470MHz 30W 12.5V MOBILE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA30H4047M-E01 数据手册
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M BLOCK DIAGRAM MITSUBISHI RF MOSFET MODULE 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancemen- Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA30H4047M-E01 RA30H4047M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA30H4047M MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H4047M RATING 17 6 100 45 -30 to +110 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA30H4047M-E01
### 物料型号 - 型号:RA30H4047M

### 器件简介 - RA30H4047M是一款30瓦射频MOSFET放大器模块,适用于12.5伏特的移动无线电,工作频率范围为400至470MHz。

### 引脚分配 - 1 RF Input (Pin) - 2 Gate Voltage (VGG), Power Control - 3 Drain Voltage (VDD), Battery RF Output (Pout) - 5 RF Ground (Case)

### 参数特性 - 最大额定值: - 漏极电压 (VoD):17V - 栅极电压 (VGG):6V - 输入功率 (Pin):100mW - 输出功率 (Pout):45W - 工作壳体温度范围 (Tcase(OP)):-30至+110℃ - 存储温度范围 (Tstg):-40至+110℃

- 电气特性(Tcase=+25℃,ZG=ZL=50Ω): - 频率范围 (f):400至470MHz - 输出功率 (Pout):在12.5V漏极电压和5V栅极电压下,最小30W - 总效率 (ηT):大于40% - 二次谐波 (2f):-25dBc - 输入VSWR (Pin):3:1 - 栅极电流 (IG):1mA(典型值)

### 功能详解 - 该模块设计用于非线性FM调制,但也可以用于线性调制,通过栅极电压设置漏极静态电流,并通过输入功率控制输出功率。 - 在VGG=5V时,典型的栅极电流为1mA。

### 应用信息 - 该模块由三菱电机制造,适用于移动无线电应用,具有超过20年的经验,已在数千万移动无线电中得到验证。

### 封装信息 - 模块尺寸:66 x 21 x 9.88 mm
RA30H4047M-E01 价格&库存

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