RA30H4452M

RA30H4452M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA30H4452M - RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA30H4452M 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M BLOCK DIAGRAM RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • 66 x 21 x 9.8 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA30H4452M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA30H4452M-101 SUPPLY FORM Antistatic tray, 10 modules/tray RA30H4452M MITSUBISHI ELECTRIC 1/7 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H4452M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA30H4452M
### 物料型号 - 型号:RA30H4452M

### 器件简介 - 简介:RA30H4452M是一款30瓦的RF MOSFET放大器模块,适用于12.5伏特的移动无线电设备,工作频率范围为440至520兆赫兹。

### 引脚分配 - RF输入:输入RF信号 - 门极电压(VGG), 功率控制:控制输出功率 - 漏极电压(VDD), 电池:连接电池 - RF输出:输出RF信号 - RF地(Case):接地

### 参数特性 - 漏极电压(VpD):最大17V,条件为VGG<5V - 门极电压(VGG):最大6V,条件为VDD<12.5V, Pn=0mW - 输入功率(Pin):最大100mW,条件为频率440-520MHz - 输出功率(Pout):最大45W,条件为ZG=Z=50 - 工作外壳温度范围(Tcase(OP)):-30至+110摄氏度 - 存储温度范围(Tstg):-40至+110摄氏度

### 功能详解 - 非线性FM调制:该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。

### 应用信息 - 应用:适用于12.5伏特移动无线电设备,工作在440至520兆赫兹频段。

### 封装信息 - 封装代码:H2S - 尺寸:66 x 21 x 9.8 mm
RA30H4452M 价格&库存

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