RA35H1516M-01

RA35H1516M-01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA35H1516M-01 - 154-162MHz 40W 12.5V MOBILE RADIO - Mitsubishi Electric Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
RA35H1516M-01 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA35H1516M-E01 RA35H1516M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA35H1516M MITSUBISHI ELECTRIC 1/8 15 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE R A35H1516M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA35H1516M-01
### 物料型号 - 型号:RA35H1516M

### 器件简介 - 简介:RA35H1516M是一款40瓦的RF MOSFET放大器模块,适用于12.5伏特的移动无线电设备,工作频率范围为154至162MHz。

### 引脚分配 - Drain Voltage (VDD):漏极电压,连接电池。 - RF Input (P_in):射频输入功率。 - Gate Voltage (VGG):栅极电压,用于控制输出功率和漏极电流。 - RF Output (P_out):射频输出功率。 - RF Ground (Case):射频地,即模块外壳。

### 参数特性 - 最大漏极电压 (VDD):17V - 最大栅极电压 (VGG):6V - 最大输入功率 (Pin):100mW - 最大输出功率 (Pout):50W - 工作温度范围:-30至+110°C - 存储温度范围:-40至+110°C

### 功能详解 - 非线性FM调制:该模块设计用于非线性FM调制,但也可以通过设置栅极电压来控制漏极静态电流,并通过输入功率控制输出功率,实现线性调制。 - 效率:在12.5V和5V的VGG下,输出功率大于40W,总效率大于50%。 - 谐波抑制:二次谐波抑制至少为-50dBc。

### 应用信息 - 应用:适用于12.5V移动无线电设备,特别是在154至162MHz频段。

### 封装信息 - 模块尺寸:66 x 21 x 9.88 mm - 订购信息: - RA35H1516M-E01:防静电托盘包装。 - RA35H1516M-01:日本包装,不含干燥剂,每托盘10个模块。
RA35H1516M-01 价格&库存

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