RA45H7687M1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW • Broadband Frequency Range: 763-870MHz • Metal cap structure that makes the improvements of RF radiation simple • Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V • Module Size: 67 x 19.4 x 9.9 mm • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. PACKAGE CODE: H2M RoHS COMPLIANCE • RA45H7687M1 is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA45H7687M1-101 SUPPLY FORM Antistatic tray, 10 modules/tray 25 Jun 2010 RA45H7687M1 1/10 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RoHS COMPLIANCE RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER VDD VGG1 VGG2 Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage 1 Gate Voltage 2 Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG1=3.4V ± 7%, VGG2