RA60H1317M_06

RA60H1317M_06

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RA60H1317M_06 - RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO - Mitsubishi El...

  • 详情介绍
  • 数据手册
  • 价格&库存
RA60H1317M_06 数据手册
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M BLOCK DIAGRAM RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA60H1317M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA60H1317M-101 SUPPLY FORM Antistatic tray, 10 modules/tray RA60H1317M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG
RA60H1317M_06
物料型号: - 型号:RA60H1317M - 订购信息:RA60H1317M-101,防静电托盘,每盘10个模块。

器件简介: - RA60H1317M是一款60瓦射频MOSFET放大模块,适用于12.5伏特的移动无线电设备,工作频率范围为135至175MHz。 - 该模块设计用于非线性FM调制,但也可以通过设置漏极静态电流和控制输入功率来实现线性调制。

引脚分配: - RF输入(P_in) - 栅极电压(VGG,用于功率控制) - 漏极电压(VDD,连接电池) - RF输出(P_out) - RF地(外壳)

参数特性: - 最大额定值: - 漏极电压(VpD):17V - 栅极电压(VGG):6V - 输入功率(Pin):100mW - 输出功率(Pout):75W - 工作外壳温度范围(Tcase(OP)):-30至+110°C - 存储温度范围(Tstg):-40至+110°C - 电气特性(Tcase=25°C): - 工作频率范围:135至175MHz - 输出功率(Pout):60W - 总效率(ηT):大于40% - 第二次谐波(2nd Harmonic):-25dBc - 输入电压驻波比(VSWR):3:1 - 栅极电流(IGG):1mA

功能详解: - 该模块由增强型MOSFET晶体管组成,在无栅极电压时,漏极和RF输入信号只有很小的漏电流,信号衰减高达60dB。 - 输出功率和漏极电流随栅极电压增加而增加,典型工作栅极电压为4.5V至5V,栅极电流为1mA。

应用信息: - 该模块适用于移动无线电设备,特别注意避免对基板的弯曲力、机械应力、去焊剂与MOSFET芯片树脂涂层反应、频繁开关机导致的热膨胀以及静电放电、浪涌、过电压和负载VSWR导致的振荡。 - 模块对静电放电敏感,需要适当的静电放电预防措施。

封装信息: - 封装代码:H2S - 模块尺寸:66 x 21 x 9.88 mm
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