RD00HHS1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0. 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+/-0.1 RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. TYPE NAME FEATURES High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V V ±10 Tc=25°C 3.1 W mW Zg=Zl=50Ω 10 mA 200 °C 150 -40 to +125 °C °C/W Junction to case 40 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA MIN 1 0.3 55 LIMITS TYP MAX. 25 1 2 3 0.7 65 UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HHS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 Vgs-Ids CHARACTERISTICS 0.6 0.5 0.4 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) Silicon MOSFET Power Transistor 30MHz,0.3W 4 CHANNEL DISSIPATION Pch(W) 3 Ids(A) On PCB(*1) with Heat-sink 2 0.3 0.2 1 On PCB(*1) 0.1 0.0 0 1 2 3 Vgs(V) 4 5 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS 1.4 1.2 1.0 Ids(A) 0.8 0.6 0.4 0.2 Vgs=3V Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vds VS. Ciss CHARACTERISTICS 20 Ta=+25°C f=1MHz 15 Ciss(pF) 10 5 0 0 5 10 Vds(V) 15 20 Vgs=6V Vgs=5V Vgs=4V 0.0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz 15 Coss(pF) Crss(pF) 3 10 2 5 1 0 0 5 10 Vds(V) 15 20 0 0 5 10 Vds(V) 15 20 RD00HHS1 MITSUBISHI ELECTRIC 2/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 Pin-Po CHARACTERISTICS 100 Po RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 35 Po Silicon MOSFET Power Transistor 30MHz,0.3W 100 Gp 1.2 1.0 Pout(W ) , Idd(A) 0.8 0.6 0.4 0.2 0.0 0 2 4 6 Pin(mW ) 8 10 Idd Ta=25°C f=30MHz Vdd=12.5V Idq=50mA ηd Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 80 ηd(%) 60 40 Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA 90 80 70 60 50 40 ηd(%) 10 Jan 2006 ηｄ 20 0 -20 -15 -10 -5 0 Pin(dBm) 5 10 Vdd-Po CHARACTERISTICS 1.2 1.0 0.8 Po(W ) 0.6 0.4 0.2 0.0 2 4 6 8 10 Vdd(V) 12 14 0 Po Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 120 0.6 0.5 Vds=10V Tc=-25~+75°C -25°C +25°C +75°C Idd 80 Idd(mA) Ids(A) 0.4 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5 40 Vgs-gm CHARACTORISTICS 0.6 0.5 0.4 gm(S) 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5 -25°C +25°C +75°C Vds=10V Tc=-25~+75°C RD00HHS1 MITSUBISHI ELECTRIC 3/6 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 RoHS Compliance, TEST CIRCUIT(f=30MHz) Silicon MOSFET Power Transistor 30MHz,0.3W V gg V dd 330uF , 50V 10uF , 5 0 V C2 C1 180pF RF -IN 3m m 7m m L1 40pF 220pF 13m m 9m m L2 10 pF 9m m 7m m 8 2pF 1k O H M 2. 5m m 7. 5m m 6m m 470pF 15O HM 15pF 40pF L3 47 0pF RD0 0 HHS 1 4m m 8m m 22m m 14m m L4 RF -O UT L1: LA L04N A R 27(0. 27m H) L2: LA L0 4N A R 39(0. 39uH) L3: LA L0 4N A R 39(0. 39uH) L4: LA L04N A 1 R0(1uH ) C 1 , C 2: 100pF , 0 . 022uF , 0 . 1uF i n p a ra l l e l N o t e : B oard m a t e ri al -g l a s s e p ox i s ubs t rat e M i c ro s t ri p li ne w i d t h= 1. 0m m / 50O H M , e r: 4. 8, t = 0. 6m m RD00HHS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 S12 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 S21 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7 RD00HHS1 MITSUBISHI ELECTRIC 5/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD00HHS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006