RD00HHS1_10

ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0. 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+/-0.1 RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. TYPE NAME FEATURES High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. How ever, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V V ±10 Tc=25°C 3.1 W mW Zg=Zl=50Ω 10 mA 200 °C 150 -40 to +125 °C °C/W Junction to case 40 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA MIN 1 0.3 55 LIMITS TYP MAX. 25 1 2 3 0.7 65 UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HHS1 17 Aug 2010 1/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 Vgs-Ids CHARACTERISTICS 0.6 0.5 0.4 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS 4 CHANNEL DISSIPATION Pch(W) ... CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) Silicon MOSFET Power Transistor 30MHz,0.3W 3 Ids(A) On PCB(*1) with Heat-sink 2 0.3 0.2 1 0.1 On PCB(*1) 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 0.0 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 1.4 1.2 1.0 Ids(A) 0.8 0.6 0.4 0.2 Vgs=3V Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vds VS. Ciss CHARACTERISTICS 20 Ta=+25°C f=1MHz 15 Ciss(pF) 10 Vgs=5V Vgs=4V 5 0.0 0 2 4 6 Vds(V) 8 10 0 0 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz 15 Coss(pF) Crss(pF) 3 10 2 5 1 0 0 5 10 Vds(V) 15 20 0 0 5 10 Vds(V) 15 20 RD00HHS1 17 Aug 2010 2/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 35 Po Pin-Po CHARACTERISTICS 100 1.2 Po 100 90 ηd Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 Gp 80 Pout(W) , Idd(A) ηd(%) 60 40 Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 Pin(mW) 8 10 Idd Ta=25°C f=30MHz Vdd=12.5V Idq=50mA 80 70 60 50 40 ηd(%) 17 Aug 2010 ηｄ 20 0 -20 -15 -10 -5 0 Pin(dBm) 5 10 Vdd-Po CHARACTERISTICS 1.2 1.0 0.8 Po(W) 0.6 0.4 0.2 0.0 2 4 6 8 10 Vdd(V) 12 14 0 Po Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 120 0.6 0.5 Vds=10V Tc=-25~+75°C -25°C +25°C +75°C Idd 80 Idd(mA) Ids(A) 0.4 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5 40 Vgs-gm CHARACTORISTICS 0.6 0.5 0.4 gm(S) 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5 -25°C +25°C +75°C Vds=10V Tc=-25~+75°C RD00HHS1 3/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TEST CIRCUIT(f=30MHz) Vgg Vdd 330μF,50V 10μF,50V C2 C1 180pF Pin 470pF 220pF 3.0mm 7.0mm L1 15pF 82pF 13.0mm 9.0mm L2 15pF 9.0mm 1kΩ 6.0mm 7.0mm 2.5mm 15Ω RD00HHS1 7.5mm L3 15pF 3pF 470pF 4.0mm 8.0mm 22.0mm 14.0mm Pout L4 L1:LAL04NAR27(0.27μH) L2:LAL04NAR39(0.39μH) L3:LAL04NAR39(0.39μH) L4:LAL04NA1R0(1μH) C1,C2:100pF,0.022μF,0.1μF in parallel Note:Board material-glass epoxi substrate micro strip line width=1.0mm/50Ω,εr:4.8,t=0.6mm RD00HHS1 17 Aug 2010 4/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 S12 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046 RoHS Compliance, Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 Silicon MOSFET Power Transistor 30MHz,0.3W S21 RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7 RD00HHS1 17 Aug 2010 5/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD00HHS1 17 Aug 2010 6/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Silicon RF Power Semiconductors RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD00HHS1 17 Aug 2010 7/7