RD00HVS1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. φ 1 0. RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME 0.8 MIN 2.5+/-0.1 OUTLINE DRAWING 1.5+/-0.1 High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD00HVS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. How ever, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25 deg.C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA °C °C °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25deg.C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=5mW, f=175MHz,Idq=50mA MIN 1 0.5 50 LIMITS TYP MAX. 25 1 2 3 0.8 60 UNIT uA uA V W % Note: Above parameters, ratings, limits and conditions are subject to change. RD00HVS1 17 Aug 2010 1/7 3.9+/-0.3 FEATURES Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) 4 CHANNEL DISSIPATION Pch(W) ... 3 On PCB(*1) with Heat-sink 0.8 0.6 0.4 0.2 2 1 On PCB(*1) 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 Ids(A) 0.0 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 1.5 Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vds VS. Ciss CHARACTERISTICS 20 18 16 14 Ciss(pF) 12 10 8 6 Vgs=4V Vgs=3V Ta=+25°C f=1MHz 1 Ids(A) Vgs=5V 0.5 4 2 0 0 5 10 Vds(V) 15 20 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 20 18 16 14 Coss(pF) 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 0 0 Crss(pF) 12 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz 3 2 1 5 10 Vds(V) 15 20 RD00HVS1 17 Aug 2010 2/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Pin-Po CHARACTERISTICS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15 ηｄ Gp Po 100 90 Pout(W) , Idd(A) 80 ηd(%) 70 60 Ta=+25°C f=175MHz Vdd=12.5V Idq=50mA 1.2 Po 120 100 ηd 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 Pin(mW) 15 20 Idd Ta=25°C f=175MHz Vdd=12.5V Idq=50mA 80 60 40 20 0 ηd(%) Idd(mA) 17 Aug 2010 50 40 30 Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15 Ta=+25°C f=520MHz Vdd=12.5V Idq=50mA ηｄ Gp Po Pin-Po CHARACTERISTICS 100 90 Pout(W) , Idd(A) 80 ηd(%) 70 60 50 40 30 1.4 1.2 1.0 0.8 0.6 0.4 Idd ηd Po 140 120 Ta=25°C f=520MHz Vdd=12.5V Idq=50mA 100 80 60 40 20 0 ηd(%) 0.2 0.0 0 5 10 Pin(mW) 15 20 Vdd-Po CHARACTERISTICS 1.4 1.2 1 Po(W) 0.8 Idd Ta=25°C f=175MHz Pin=5mW Idq=50mA Zg=ZI=50 ohm Po Vdd-Po CHARACTERISTICS 280 240 200 Po(W) 160 120 80 40 0 Idd(mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=520MHz Pin=15mW Idq=50mA Zg=ZI=50 ohm Po 320 280 240 200 Idd 0.6 0.4 0.2 0 4 6 8 10 Vdd(V) 12 14 160 120 80 40 0 RD00HVS1 3/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TEST CIRCUIT(f=175MHz) Vgg V dd C1 18.0m m 18.0m m C2 10uF,50V 4.7kO HM 4m m R F-in 2m m 19.5m m L1 10pF 18pF 10.5m m 4.5m m L2 270O HM 240pF L1: Enam eled wire 4Turns,D:0.43m m ,2.46m m O .D L2:LQ G 11A68N(68nH,m urata) L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D L4: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D C 1,C2:1000pF,0.022uF in parallel 4m m RD 00HV S1 5m m L4 4m m 6.5m m 20.5m m L3 3pF 15m m 4.0m m 180pF 250pF R F-out 18pF Note:Board m aterial-glass epoxi substrate M icro strip line width=1.0m m /50 O HM,er:4.8,t=0.6m m TEST CIRCUIT(f=520MHz) Vgg Vdd C1 W 4.7kOHM 8.5mm RF-in 62pF 18pF 15pF 6.6nH 24pF 18.1nH 10pF 4mm 7.7mm 3.2mm 19mm RD00HVS1 520MHz 0.6mm 2.5mm 6mm C2 W 19mm 34.5nH 10.8nH 1.2mm 25.8mm 15mm RF-out 190pF 5pF 22pF 10pF 3pF 7pF Note: Board material- Glass epoxy copper-clad laminates FR-4 Micro strip line width=1mm,50 OHM, er:4.8, t=0.6mm C1,C2:1000pF,0.022uF in parallel W:Line width=1.0mm RD00HVS1 17 Aug 2010 4/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 S12 (mag) 0.027 0.039 0.043 0.048 0.054 0.058 0.060 0.062 0.063 0.063 0.064 0.063 0.062 0.061 0.060 0.058 0.056 0.054 0.053 0.051 0.048 0.046 (ang) 66.7 56.1 50.7 45.6 37.5 30.2 23.7 18.2 13.3 8.5 4.8 1.1 -2.3 -5.4 -8.6 -11.0 -13.5 -16.2 -17.8 -20.0 -22.1 -23.5 (mag) 0.928 0.889 0.865 0.843 0.796 0.754 0.716 0.688 0.668 0.652 0.640 0.633 0.627 0.626 0.625 0.627 0.630 0.634 0.639 0.645 0.654 0.661 S22 (ang) -24.7 -36.5 -42.0 -47.2 -56.4 -64.4 -71.5 -77.6 -83.4 -88.7 -93.3 -97.9 -102.1 -105.9 -109.6 -113.4 -116.8 -120.0 -123.3 -126.4 -129.3 -132.1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.004 0.987 0.972 0.957 0.929 0.898 0.875 0.857 0.844 0.831 0.824 0.815 0.810 0.809 0.807 0.806 0.808 0.808 0.810 0.811 0.814 0.817 (ang) -35.2 -51.9 -59.7 -67.1 -80.1 -91.5 -101.4 -110.0 -117.3 -124.1 -130.0 -135.0 -139.9 -144.1 -148.1 -151.8 -155.1 -158.0 -161.1 -163.9 -166.5 -168.9 S21 (mag) (ang) 13.480 158.7 12.911 147.1 12.500 141.6 12.035 136.2 11.030 126.6 10.055 118.7 9.157 111.3 8.322 104.9 7.642 99.3 6.991 93.9 6.432 89.5 5.963 84.9 5.480 80.7 5.103 77.0 4.769 73.1 4.420 69.9 4.161 66.8 3.900 63.1 3.639 60.3 3.466 57.7 3.254 54.1 3.045 51.9 RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.005 0.995 0.980 0.967 0.943 0.916 0.891 0.877 0.862 0.852 0.844 0.835 0.828 0.824 0.823 0.820 0.821 0.822 0.823 0.822 0.826 0.828 (ang) -33.4 -49.7 -57.5 -64.6 -77.5 -88.9 -98.7 -107.6 -115.0 -121.9 -128.1 -133.3 -138.3 -142.7 -146.8 -150.6 -153.9 -157.2 -160.2 -163.1 -165.9 -168.4 S21 (mag) (ang) 13.343 160.0 12.874 149.0 12.525 143.6 12.108 138.3 11.193 129.0 10.249 121.2 9.403 113.9 8.582 107.3 7.916 101.9 7.273 96.4 6.706 91.9 6.224 87.3 5.755 83.0 5.358 79.3 5.024 75.4 4.671 72.0 4.398 68.9 4.134 65.2 3.853 62.3 3.677 59.7 3.459 56.3 3.241 53.9 S12 (mag) 0.024 0.034 0.038 0.042 0.047 0.052 0.054 0.056 0.057 0.057 0.057 0.058 0.056 0.056 0.054 0.053 0.051 0.050 0.048 0.047 0.044 0.042 (ang) 68.3 57.9 53.2 47.8 39.3 32.3 26.2 20.6 15.7 11.2 7.5 3.4 0.2 -2.5 -5.8 -8.4 -10.5 -13.3 -15.2 -17.2 -19.5 -20.2 (mag) 0.898 0.865 0.845 0.826 0.781 0.743 0.709 0.681 0.661 0.644 0.633 0.625 0.619 0.618 0.616 0.615 0.618 0.622 0.628 0.633 0.640 0.646 S22 (ang) -22.6 -33.1 -38.0 -42.9 -51.3 -58.9 -65.6 -71.5 -77.0 -82.0 -86.6 -91.2 -95.2 -99.0 -102.9 -106.6 -110.1 -113.2 -116.5 -119.8 -122.9 -125.7 RD00HVS1 17 Aug 2010 5/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD00HVS1 17 Aug 2010 6/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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