RD01MUS1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. φ 1 0. RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V +/-10 V Tc=25°C 3.6 W Zg=Zl=50Ω 60 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 3 uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD01MUS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 3.9+/-0.3 FEATURES 0.8 MIN 2.5+/-0.1 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Vgs-Ids CHARACTERISTICS 1.0 0.8 0.6 0.4 0.2 0.0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) Silicon MOSFET Power Transistor 520MHz,1W 4 CHANNEL DISSIPATION Pch(W) 3 Ids(A) On PCB(*1) with Heat-sink 2 1 On PCB(*1) 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 2.5 Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vds VS. Ciss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 Ta=+25°C f=1MHz 2 1.5 Vgs=5V 1 0.5 0 0 2 4 6 Vds(V) 8 10 Vgs=4V Vgs=3V Ciss(pF) Ids(A) 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 4 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS Ta=+25°C f=1MHz 3 Crss(pF) Coss(pF) 2 1 0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20 RD01MUS1 MITSUBISHI ELECTRIC 2/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Pin-Po CHARACTERISTICS 100 Po RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A ) 25 20 15 10 5 0 -10 Ta= + 25°C f= 520M Hz Vdd= 7.2V Idq= 100m A Gp ηｄ Po Silicon MOSFET Power Transistor 520MHz,1W 100 90 Pout(W) , Idd(A ) 80 ηd( %) 70 60 50 40 30 0 Pin(dBm) 10 20 2.0 1.8 1.6 1.4 1.0 0.8 0.6 0.4 0.2 0.0 0 20 Pin(mW) 40 60 Idd Ta= 25°C f= 520M Hz Vdd= 7.2V Idq= 100m A 80 ηd 40 20 0 V dd-Po CHARACTERISTICS 4.0 3.5 3.0 2.5 Po(W) 2.0 1.5 1.0 0.5 0.0 4 6 8 10 V dd(V ) 12 14 Ta= 25°C f= 520M Hz Pin= 30m W Idq= 100m A Zg= ZI= 50 ohm Po 0.8 0.7 0.6 Idd 0.5 0.4 0.3 0.2 0.1 0.0 Idd(A ) RD01MUS1 MITSUBISHI ELECTRIC 3/6 10 Jan 2006 ηd( %) 1.2 60 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Vdd RoHS Compliance, TEST CIRCUIT(f=520MHz) Vg g Silicon MOSFET Power Transistor 520MHz,1W C1 18 m m 11m m C2 10uF,50V 5m m 4.7k O H M 4m m R F -I N 62pF 24pF 240p F 68 O H M 3pF 30 m m 13 m m RD 0 1 M U S1 6.5m m 4m m 5.5m m 3m m L1 6 8pF 17.5m m 25.5m m 4 m m RF -O U T 6 2pF 10 pF L1: E nam eled w ire 5 Turn s ,D :0 .43m m ,2.46 m m O .D C 1 ,C 2 : 1 000 p F ,0 .022 u F in p aralle l N o te :B oard m ate rial-g las s e poxi s u bs trate M ic ro s trip line w idth = 1.0m m /50O H M ,e r:4 .8 ,t= 0 .6 m m INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W 520MHz Zin* Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance RD01MUS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 S12 (mag) 0.043 0.050 0.053 0.054 0.053 0.052 0.051 0.049 0.047 0.046 0.045 0.043 0.041 0.039 0.036 0.033 0.031 0.028 0.026 0.023 0.021 0.018 (ang) 41.3 26.5 16.1 8.4 2.6 -2.4 -6.6 -9.9 -13.3 -14.1 -15.8 -18.5 -21.0 -22.3 -24.9 -25.7 -26.8 -27.8 -27.3 -27.0 -26.3 -23.8 (mag) 0.772 0.687 0.630 0.600 0.588 0.583 0.590 0.597 0.608 0.615 0.622 0.636 0.650 0.666 0.680 0.694 0.711 0.723 0.734 0.749 0.760 0.771 S22 (ang) -63.0 -83.1 -97.3 -107.1 -114.4 -120.1 -124.6 -128.4 -131.7 -133.1 -134.8 -137.3 -140.1 -142.4 -144.6 -146.8 -148.8 -150.9 -152.9 -154.5 -156.3 -158.2 RoHS Compliance, Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.927 0.875 0.833 0.811 0.798 0.791 0.790 0.788 0.794 0.796 0.798 0.801 0.807 0.813 0.817 0.825 0.831 0.837 0.845 0.851 0.857 0.862 (ang) -77.0 -101.2 -117.9 -129.5 -138.0 -144.5 -149.7 -154.1 -158.0 -159.2 -161.2 -164.2 -167.0 -169.3 -171.6 -174.0 -176.0 -178.0 -179.9 178.2 176.5 174.7 Silicon MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) S21 (mag) (ang) 19.536 132.3 15.657 116.5 12.662 105.0 10.427 96.2 8.814 89.3 7.548 83.3 6.541 78.2 5.789 73.5 5.106 69.0 4.876 67.5 4.576 65.2 4.120 61.3 3.714 58.0 3.389 54.7 3.092 51.3 2.820 48.6 2.616 46.0 2.401 42.8 2.207 40.9 2.076 38.4 1.912 35.5 1.773 34.0 RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.945 0.896 0.856 0.833 0.819 0.810 0.806 0.804 0.808 0.809 0.812 0.813 0.819 0.824 0.827 0.834 0.841 0.845 0.852 0.857 0.864 0.868 (ang) -72.3 -96.7 -113.9 -126.2 -135.1 -141.9 -147.7 -152.2 -156.4 -157.8 -159.9 -163.0 -166.0 -168.6 -171.0 -173.3 -175.5 -177.4 -179.4 178.6 176.9 175.0 S21 (mag) (ang) 19.517 135.2 15.937 119.5 13.050 107.7 10.830 98.6 9.194 91.6 7.890 85.3 6.868 80.1 6.084 75.3 5.382 70.7 5.139 69.1 4.831 66.7 4.356 62.7 3.931 59.3 3.597 56.0 3.283 52.4 2.991 49.8 2.779 47.1 2.554 43.8 2.350 41.9 2.209 39.4 2.035 36.3 1.889 34.8 S12 (mag) 0.039 0.046 0.049 0.050 0.050 0.049 0.047 0.046 0.044 0.044 0.042 0.040 0.038 0.036 0.034 0.031 0.029 0.026 0.024 0.022 0.019 0.017 (ang) 44.5 29.2 18.5 11.2 5.0 -0.3 -4.2 -7.7 -11.0 -12.4 -13.7 -16.2 -18.7 -20.8 -22.3 -23.7 -24.6 -25.9 -25.4 -24.3 -23.5 -20.1 (mag) 0.742 0.665 0.612 0.581 0.568 0.565 0.571 0.580 0.591 0.596 0.605 0.618 0.633 0.649 0.664 0.678 0.695 0.708 0.720 0.736 0.747 0.759 S22 (ang) -57.4 -76.6 -90.6 -100.4 -107.8 -113.8 -118.5 -122.3 -126.1 -127.5 -129.4 -132.2 -135.1 -137.6 -140.1 -142.5 -144.5 -146.7 -148.9 -150.7 -152.4 -154.6 RD01MUS1 MITSUBISHI ELECTRIC 5/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD01MUS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006