RD01MUS2

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. φ 1 0. RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from TYPE NAME gate to source for ESD protection. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ. •Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX RoHS COMPLIANT RD01MUS2-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. How ever, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V -5/+10 V Tc=25°C 3.6 W Zg=Zl=50Ω 100 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 D G SCHEMATIC S DRAWING Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηd PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1.3 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 2.3 uA uA V W % Note: Above parameters, ratings, limits and conditions are subject to change. RD01MUS2 17 Aug 2010 1/7 3.9+/-0.3 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) Silicon MOSFET Power Transistor 520MHz,1W 4 CHANNEL DISSIPATION Pch(W) ... 3 Ids(A) On PCB(*1) with Heat-sink 0.8 0.6 0.4 0.2 0.0 2 1 On PCB(*1) 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 2.5 Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vds VS. Ciss CHARACTERISTICS 20 18 16 14 Ciss(pF) 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz 2 Ids(A) 1.5 Vgs=5V 1 Vgs=4V 0.5 Vgs=3V 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 20 18 16 14 Coss(pF) 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 0 0 Crss(pF) 12 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz 3 2 1 5 10 Vds(V) 15 20 RD01MUS2 17 Aug 2010 2/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 RoHS Compliance, TYPICAL CHARACTERISTICS Silicon MOSFET Power Transistor 520MHz,1W Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -10 0 10 Pin(dBm) 20 ηｄ Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA Gp Po Pin-Po CHARACTERISTICS 80 70 Pout(W) , Idd(A) 60 ηd(%) 50 40 30 20 10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 Po 80 ηd(%) 17 Aug 2010 ηd 60 40 20 0 Idd Ta=25°C f=520MHz Vdd=7.2V Idq=100mA 20 40 Pin(mW) 60 Vdd-Po CHARACTERISTICS 4.0 3.5 3.0 Po(W) 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm Po Vgs-Ids CHARACTORISTICS 2 0.8 0.7 0.6 Idd(A) Ids(A),GM(S) 2 Vds=10V Tc=-25~+75°C -25°C +25°C Idd 0.5 0.4 0.3 0.2 0.1 0.0 1 +75°C 0 2 3 4 Vgs(V) 5 6 RD01MUS2 3/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 Vdd RoHS Compliance, TEST CIRCUIT(f=520MHz) Vgg Silicon MOSFET Power Transistor 520MHz,1W C1 18m m 11m m C2 10uF,50V 5m m 4.7kO HM 4m m R F-IN 62pF 24pF 240pF 68O HM 3pF 30m m 13m m RD01MUS2 R D01MUS1 68pF 6.5m m 4m m 5.5m m L1 3m m 17.5m m 25.5m m 4 m m R F-O UT 62pF 10pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C 1 ,C2: 1000 p F ,0.022uF in p arallel Note:Board m aterial-glass epoxi substrate Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W 520MHz Zin* Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance RD01MUS2 17 Aug 2010 4/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 S12 (mag) 0.046 0.052 0.054 0.054 0.054 0.053 0.053 0.051 0.048 0.047 0.046 0.045 0.041 0.040 0.038 0.035 0.033 0.030 0.027 0.025 0.022 0.020 0.017 (ang) 36.0 21.1 15.3 10.8 3.0 -4.3 -7.8 -12.7 -17.1 -20.0 -21.0 -24.7 -25.0 -29.2 -31.4 -33.6 -35.2 -37.7 -37.8 -37.4 -37.8 -37.5 -34.9 (mag) 0.761 0.660 0.632 0.606 0.575 0.566 0.569 0.574 0.588 0.604 0.609 0.620 0.637 0.653 0.672 0.686 0.703 0.717 0.731 0.742 0.757 0.766 0.778 S22 (ang) -65.2 -85.2 -92.3 -98.0 -107.2 -114.1 -119.4 -123.7 -127.7 -131.0 -132.4 -134.3 -137.2 -139.7 -142.4 -144.6 -147.1 -149.3 -151.3 -153.6 -155.5 -157.6 -159.3 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.941 0.881 0.863 0.844 0.820 0.813 0.807 0.807 0.809 0.810 0.812 0.813 0.820 0.822 0.831 0.837 0.842 0.847 0.853 0.857 0.862 0.865 0.870 (ang) -83.9 -107.9 -116.7 -123.9 -134.4 -142.3 -148.3 -152.7 -156.9 -160.0 -161.2 -163.1 -165.6 -168.0 -170.1 -172.1 -174.0 -176.0 -177.9 -179.6 178.9 177.2 175.6 S21 (mag) (ang) 18.598 128.5 14.425 112.0 12.863 105.7 11.496 100.2 9.351 91.4 7.854 84.1 6.682 77.7 5.797 72.5 5.096 67.0 4.487 62.7 4.286 61.0 3.996 58.1 3.595 54.1 3.231 50.4 2.944 46.8 2.686 43.2 2.451 40.0 2.255 36.6 2.076 33.6 1.915 30.7 1.769 28.0 1.645 25.5 1.526 23.2 RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD01MUS2 S11 (mag) 0.957 0.902 0.884 0.867 0.843 0.831 0.824 0.821 0.823 0.824 0.826 0.825 0.829 0.833 0.839 0.843 0.849 0.854 0.858 0.862 0.869 0.870 0.876 (ang) -79.3 -103.4 -112.7 -120.1 -131.4 -139.8 -146.1 -150.9 -155.3 -158.6 -160.0 -161.9 -164.4 -167.2 -169.4 -171.5 -173.6 -175.4 -177.2 -179.0 179.4 177.6 175.9 S21 (mag) (ang) 18.576 131.4 14.762 114.9 13.236 108.3 11.888 102.6 9.751 93.5 8.210 86.0 7.005 79.5 6.079 74.1 5.343 68.6 4.726 64.2 4.523 62.2 4.226 59.6 3.792 55.6 3.429 51.5 3.117 47.7 2.837 44.2 2.597 41.1 2.397 37.6 2.196 34.7 2.034 31.8 1.890 29.0 1.745 26.2 1.625 23.4 S12 (mag) 0.041 0.049 0.049 0.051 0.051 0.050 0.050 0.048 0.046 0.043 0.044 0.042 0.040 0.037 0.035 0.033 0.030 0.028 0.026 0.022 0.020 0.018 0.017 (ang) 40.9 24.5 17.9 13.0 6.1 -1.5 -6.4 -11.2 -14.5 -19.2 -19.3 -21.9 -23.9 -27.8 -30.5 -31.2 -34.9 -35.3 -35.7 -37.5 -37.4 -37.7 -33.9 (mag) 0.740 0.642 0.615 0.592 0.559 0.553 0.553 0.559 0.573 0.589 0.594 0.605 0.622 0.639 0.656 0.675 0.691 0.705 0.718 0.732 0.745 0.757 0.770 S22 (ang) -59.4 -78.6 -85.4 -91.3 -100.5 -107.6 -112.9 -117.9 -122.0 -125.5 -127.1 -129.0 -132.0 -134.9 -137.8 -140.1 -143.0 -145.2 -147.6 -149.6 -151.9 -154.1 -156.0 17 Aug 2010 5/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD01MUS2 17 Aug 2010 6/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD01MUS2 17 Aug 2010 7/7