RD02MUS1B_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT RD02MUS1B-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) RD02MUS1B 17 Aug 2010 1/9 3.5+/-0.05 2.0+/-0.05 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS UNIT 30 V +/-20 V 21.9 W 0.1 W 1.5 A °C 150 -40 to +125 °C °C/W 5.7 Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS Vth Pout1 ηD1 Pout2 ηD2 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f=175MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(Pin Control) f=520MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1 2 55 2 50 LIMITS TYP MAX. 100 1 1.8 3 3 65 3 65 No destroy UNIT uA uA V W % W % - Load VSWR tolerance No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. RD02MUS1B 17 Aug 2010 2/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B Vgs-Ids CHARACTERISTICS 3.0 2.5 Ta=+25°C Vds=7.2V RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.8 mm) 25 CHANNEL DISSIPATION Pch(W) ... 20 15 10 5 0 0 On heat-sink Ids(A),GM(S) 2.0 1.5 1.0 Ids On PCB (*1) with through hole and Heat-sink GM 0.5 0.0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.) 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 5.0 4.5 4.0 3.5 Ciss(pF) 3.0 Ids(A) 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 Vds(V) 8 10 Vgs=4V Vgs=3V Vgs=5V Vgs=6V Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V V ds VS. Ciss CHARACTERISTICS 40 Ta=+25°C f=1MHz 30 20 10 0 0 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 40 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 6 5 4 Ta=+25°C f=1MHz 30 Coss(pF) Crss(pF) 20 3 2 10 1 0 0 5 10 Vds(V) 15 20 0 0 5 10 Vds(V) 15 20 RD02MUS1B 17 Aug 2010 3/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B Pin-Po CHARACTERISTICS @f=175MHz RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Po 40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10 100 90 Pout(W) , Idd(A) 80 ηd(%) 4.0 100 3.0 Po ηd 80 ηd(%) Idd(A) 17 Aug 2010 Gp ηｄ 70 60 50 2.0 Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA 40 30 20 1.0 Ta=25°C f=175MHz Vdd=7.2V Idq=200mA Idd 60 40 0.0 0 20 40 60 Pin(mW) 80 -5 0 5 10 Pin(dBm) 15 20 20 100 40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10 Pin-Po CHARACTERISTICS @f=520MHz Po 100 90 Pout(W) , Idd(A) 80 4.0 Pin-Po CHARACTERISTICS @f=520MHz Po 100 3.0 ηd 80 ηd(%) Gp ηd(%) ηｄ 70 60 50 2.0 Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA 40 30 20 1.0 Idd Ta=25°C f=520MHz Vdd=7.2V Idq=200mA 60 40 0.0 0 20 40 60 Pin(mW) 80 -5 0 5 10 Pin(dBm) 15 20 20 100 7 6 5 Po(W) 4 3 2 1 0 3 Vdd-Po CHARACTERISTICS @f=175MHz Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po 1.4 1.2 1.0 Idd(A) Po(W) 7 6 5 4 3 2 1 0 3 Vdd-Po CHARACTERISTICS @f=520MHz Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po 1.4 1.2 1.0 Idd 0.8 0.6 0.4 0.2 0.0 Idd 0.8 0.6 0.4 0.2 0.0 5 7 9 Vdd(V) 11 13 5 7 9 Vdd(V) 11 13 RD02MUS1B 4/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B Vdd RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TEST CIRCUIT(f=175MHz) Vgg C1 19m m RD02MUS1B R D 02MVS1 175MHz C2 15m m 10pF L3 5mm 3m m 3m m 11.5m m 10pF 10uF,50V 4.7kO HM RF-IN 3m m 33m m 6.5m m 12m m L1 39pF 68O HM 240pF 13.5m m 12m m 5m m RF-O UT L2 62pF 43pF 5m m 62pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000 p F,0.0022uF in p arallel Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m TEST CIRCUIT(f=520MHz) V gg Vdd C1 19m m 19m m R D 02MUS 1 B 520MHz 3m m 11m m 62pF 6pF 43pF 240pF 68O HM L1 C2 10uF,50V 4.7kO HM 26.5m m 20m m RF-IN 2m m 10m m 4.5m m 40.5m m R F-OUT 62pF 18pF L1: Enam eled wire 9Turns,D :0.43m m ,2.46m m O .D C1,C 2:1000pF,0.022uF in parallel Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m RD02MUS1B 17 Aug 2010 5/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance 175MHz Zout* 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance 520MHz Zout* RD02MUS1B 17 Aug 2010 6/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.847 0.828 0.824 0.817 0.816 0.816 0.820 0.827 0.835 0.844 0.854 0.858 0.859 0.862 0.871 0.878 0.883 0.890 0.897 0.899 0.905 0.907 0.913 0.915 0.918 (ang) -132.5 -144.6 -148.1 -152.8 -156.2 -161.2 -164.9 -167.6 -169.9 -171.9 -173.6 -174.3 -174.7 -175.3 -176.7 -178.0 -179.4 179.4 178.3 177.0 176.0 175.1 174.3 173.2 172.6 S21 (mag) (ang) 16.923 100.2 12.806 90.7 11.555 87.5 9.864 82.8 8.579 78.6 6.712 71.2 5.436 64.9 4.501 59.3 3.813 54.0 3.257 49.3 2.823 44.9 2.668 43.1 2.613 42.6 2.458 40.9 2.161 37.1 1.911 33.5 1.701 30.4 1.522 27.3 1.368 24.4 1.238 21.7 1.123 19.3 1.025 17.1 0.937 14.9 0.859 12.9 0.794 11.0 S12 (mag) 0.042 0.042 0.042 0.042 0.041 0.039 0.038 0.036 0.034 0.032 0.031 0.030 0.030 0.029 0.027 0.025 0.024 0.022 0.021 0.019 0.018 0.016 0.015 0.013 0.012 (ang) 8.9 -0.1 -3.3 -7.6 -11.2 -17.6 -23.0 -28.2 -32.2 -36.5 -39.8 -41.1 -41.9 -43.2 -46.6 -49.5 -51.5 -54.4 -56.1 -58.7 -59.4 -60.7 -62.1 -64.4 -64.9 (mag) 0.621 0.598 0.591 0.590 0.594 0.609 0.628 0.653 0.675 0.699 0.723 0.732 0.735 0.743 0.763 0.781 0.798 0.811 0.824 0.836 0.845 0.853 0.861 0.870 0.874 S22 (ang) -118.8 -130.5 -133.7 -138.0 -141.2 -145.5 -148.8 -151.2 -153.5 -155.8 -157.7 -158.4 -158.6 -159.6 -161.5 -162.9 -164.6 -166.1 -167.7 -169.0 -170.3 -171.4 -172.5 -173.5 -174.6 RD02MUS1B 17 Aug 2010 7/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD02MUS1B 17 Aug 2010 8/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 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