RD06HHF1_08

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 DRAWING 9.1+/- 0. 7 1.3+/- 0. 4 3. 6+/- 0.2 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,6W OUTLINE 3.2+/-0.4 RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. 12. 3+/ -0.6 2 9+/- 0.4 4.8MAX FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 1.2+/- 0. 4 0. 8+0.10/- 0.15 APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 12.3MI N 123 0.5+0. 10/ -0.15 2. 5 2. 5 3. 1+/ -0.6 5deg 4.5+/- 0.5 RoHS COMPLIANT 9. 5MAX RD06HHF1-101 is a RoHS compliant products. T orelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot D im ension in mm . marking. This product include the lead in high melting temperaturetype solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) note: PINS 1:GAT E 2:SOU RCE 3:DRA IN RD06HHF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 27.8 W Zg=Zl=50Ω 0.3 W 3 A °C 150 -40 to +150 °C °C/W junction to case 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.15W, f=30MHz, Idq=0.5A VDD=15.2V,Po=6W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 55 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HHF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor 30MHz,6W 50 CHANNEL DISSIPATION Pch(W ) 40 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 30 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 4 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 40 Ciss(pF) Ta=+25°C f=1MHz 3 Ids(A) Vgs=9V Vgs=8V 2 Vgs=7V 30 20 10 0 0 10 Vds(V) 20 30 1 Vgs=6V Vgs=5V 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz RD06HHF1 MITSUBISHI ELECTRIC 3/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Pin-Po CHARACTERISTICS RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 20 10 Ｉｄｄ Gp Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Silicon MOSFET Power Transistor 30MHz,6W 100 Po 14 12 Pout(W ) , Idd(A) 10 ηd Po 100 90 80 ηd(%) 7 Mar 2008 Po(dBm) , Gp(dB) , Idd(A) 80 ηｄ ηd(%) 60 40 20 0 8 6 4 2 0 0.0 0.1 Pin(W ) 0.2 0.3 Idd Ta=25°C f=30MHz Vdd=12.5V Idq=0.5A 70 60 50 40 30 0 -10 0 10 Pin(dBm) 20 Vdd-Po CHARACTERISTICS 16 14 12 Po(W ) 10 8 6 4 2 0 4 6 8 10 Vdd(V) 12 14 0 0 Idd Ta=25°C f=30MHz Pin=0.15W Idq=0.5A Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 4 5 4 Ids(A),GM(S) 3 2 1 Vds=10V Tc=-25~+75°C -25°C +75°C +25°C 3 Po 2 1 Idd(A) 0 2 4 6 Vgs(V) 8 10 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C 1.5 gm(S) 1.0 -25°C +25°C 0.5 +75°C 0.0 0 1 2 3 456 Vgs(V) 7 8 9 RD06HHF1 MITSUBISHI ELECTRIC 4/8 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 8.2Kohm 220pF 100pF 1Kohm C2 RF-IN 1ohm 220pF 150/120pF 56pF 100pF L5 L3 L4 C1 C1 84pF 10uF,50V*3pcs C1 L1 56pF 30pF RF-OUT L6 C2 100pF 200/200pF 5 16 35 46 65 75 77.5 88 91 100 C 1:100pF, 0.022uF, 0.1uF in parallel C 2:470pF*2 in parallel L1:10Turns,I.D 8mm,D0.9mm copper wire L2:10Turns,I.D 6mm,D 1.6mm si lver plated copper wire L3:5Turns,I.D 5.6mm,D 0.9mm copper wire L4:6Turns,I.D 5.6mm,D 0.9mm copper wire L5:4Turns,I.D 5.6mm,D 0.9mm copper wire P=0.5mm L6:7Turns,I.D 5.6mm,D 0.9mm copper wire 1.5 18 36 42 45 67 75 91 100 D imensi ons:mm Note:Board material- teflon substrate mi cro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm RD06HHF1 MITSUBISHI ELECTRIC 5/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=50Ω f=30MHz Zout f=30MHz Zin Zin , Zout f (MHz) 30 Zin (ohm) 65.06-j150.9 Zout (ohm) 8.75-j4.92 Conditions Po=10W, Vdd=12.5V,Pin=0.15W RD06HHF1 MITSUBISHI ELECTRIC 6/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 RD06HHF1 MITSUBISHI ELECTRIC 7/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD06HHF1 MITSUBISHI ELECTRIC 8/8 7 Mar 2008