RD06HVF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 DRAWING 9.1+/- 0. 7 1.3+/- 0. 4 3. 6+/- 0.2 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 175MHz,6W OUTLINE 3.2+/-0.4 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4.8MAX High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz 9+/- 0.4 FEATURES 12. 3+/ -0.6 2 1.2+/- 0. 4 0. 8+0.10/- 0.15 APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 12.3MI N 123 0.5+0. 10/ -0.15 2. 5 2. 5 3. 1+/ -0.6 5deg 4.5+/- 0.5 RoHS COMPLIANT 9. 5MAX note: RD06HVF1-101 is a RoHS compliant products. T orelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot D im ension in mm . marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) PINS 1:GAT E 2:SOU RCE 3:DRA IN RD06HVF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 27.8 W Zg=Zl=50Ω 0.6 W 3 A °C 150 -40 to +150 °C °C/W junction to case 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.3W, f=175MHz, Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 60 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HVF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor 175MHz,6W 50 CHANNEL DISSIPATION Pch(W ) 40 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 30 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 4 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 40 Ciss(pF) Ta=+25°C f=1MHz 3 Ids(A) Vgs=9V Vgs=8V 2 Vgs=7V 30 20 10 0 0 10 Vds(V) 20 30 1 Vgs=6V Vgs=5V 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz RD06HVF1 MITSUBISHI ELECTRIC 3/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 Pin-Po CHARACTERISTICS RoHS Compliance, TYPICAL CHARACTERISTICS Silicon MOSFET Power Transistor 175MHz,6W Pin-Po CHARACTERISTICS 50 40 30 20 Gp Ta= + 25°C f= 175M H z Vdd= 12.5V Idq= 0.3A 100 Po 14 Po 100 90 80 ηd( %) 70 ηd Ta= 25°C f= 175M Hz Vdd= 12.5V Idq= 0.3A Idd 12 80 60 40 20 Ｉｄ ｄ Po(dBm) , Gp(dB) , Idd(A ) Pout(W) , Idd(A ) 10 8 6 4 2 0 0.0 0.1 0.2 0.3 Pin(W) 0.4 0.5 ηd( %) ηｄ 60 50 40 30 0.6 10 0 0 5 10 15 20 Pin(dBm) 25 30 0 V dd-Po CHARACTERISTICS 16 14 12 10 Po(W) 8 6 4 2 0 4 6 8 10 Vdd(V ) 12 14 0 0 0 Idd Ta= 25°C f= 175M H z Pin= 0.3W Idq= 0.3A Zg= ZI= 50 ohm V gs -Ids CHARACTORISTICS 2 4 5 4 V ds =10V Tc =-25~+75°C -25°C Ids (A ),GM(S) 3 2 1 Idd(A ) +75°C +25°C Po 3 2 1 2 4 6 Vgs (V ) 8 10 Vgs -gm CHARACTORISTICS 2.0 Vds =10V Tc =-25~+75°C 1.5 gm(S) 1.0 -25°C +25°C 0.5 +75°C 0.0 0 1 2 3 45 Vgs ( V) 6 7 8 9 RD06HVF1 MITSUBISHI ELECTRIC 4/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 Vdd RoHS Compliance, TEST CIRCUIT(f=175MHz) Silicon MOSFET Power Transistor 175MHz,6W Vgg C1 9.1kOHM L6 8.2kOHM C3 100OHM 300pF L1 RF-IN 300pF L2 L3 L4 C2 175MHz RD 06HVF1 L5 RF-OUT 82pF 10pF 7 25 30 33 52 55 72 75 92 100 C 1:2200pF 10uF in parallel C 2:2200pF*2 in parallel C 3:2200pF,330uF in parallel L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 5 70 87 92 5pF 30pF 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm D imensions:mm RD06HVF1 MITSUBISHI ELECTRIC 5/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175MHz Zout* f=135MHz Zo Zo=50ohm f=175MHz Zin* f=175MH Zo Zin , Zout f (MHz) 175 Zin (ohm) 4.25-j25.6 Zout (ohm) 5.64-j1.05 Conditions Po=10W, Vdd=12.5V,Pin=0.3W RD06HVF1 MITSUBISHI ELECTRIC 6/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 RD06HVF1 MITSUBISHI ELECTRIC 7/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD06HVF1 MITSUBISHI ELECTRIC 8/8 7 Mar 2008