RD06HVF1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 DRAWING 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 175MHz,6W OUTLINE 3.2+/-0.4 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4.8MAX High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz 9+/-0.4 FEATURES 12.3+/-0.6 2 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 12.3MIN 123 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 5deg 4.5+/-0.5 RoHS COMPLIANT 9.5MAX note: RD06HVF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) PINS 1:GATE 2:SOURCE 3:DRAIN RD06HVF1 6 Jul 2010 1/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 27.8 W Zg=Zl=50Ω 0.6 W 3 A °C 150 -40 to +150 °C °C/W junction to case 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.3W, f=175MHz, Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 60 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HVF1 6 Jul 2010 2/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0 Ta=+25°C Vds=10V 50 CHANNEL DISSIPATION Pch(W) 40 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 30 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 4 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 Ciss(pF) 40 30 20 10 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz 3 Ids(A) Vgs=9V Vgs=8V 2 Vgs=7V 1 Vgs=6V Vgs=5V 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz RD06HVF1 6 Jul 2010 3/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 Pin-Po CHARACTERISTICS RoHS Compliance, TYPICAL CHARACTERISTICS Silicon MOSFET Power Transistor 175MHz,6W Pin-Po CHARACTERISTICS 50 40 30 20 Gp Ta=+25°C f=175MHz Vdd=12.5V Idq=0.3A 100 Po 14 Po 100 90 80 ηd(%) 70 ηd Ta=25°C f=175MHz Vdd=12.5V Idq=0.3A Idd 12 80 60 40 20 Ｉｄｄ Po(dBm) , Gp(dB) , Idd(A) Pout(W) , Idd(A) 10 8 6 4 2 0 0.0 0.1 0.2 0.3 Pin(W) 0.4 0.5 ηd(%) ηｄ 60 50 40 30 0.6 10 0 0 5 10 15 20 Pin(dBm) 25 30 0 Vdd-Po CHARACTERISTICS 16 14 12 10 Po(W) 8 6 4 2 0 4 6 8 10 Vdd(V) 12 14 0 0 0 Idd Ta=25°C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm V gs-Ids CHARACTORISTICS 2 4 5 4 Vds=10V Tc=-25~+75°C -25°C Ids(A),GM(S) 3 2 1 Idd(A) +75°C +25°C Po 3 2 1 2 4 6 Vgs(V) 8 10 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C 1.5 gm(S) 1.0 -25°C +25°C 0.5 +75°C 0.0 0 1 2 3 45 Vgs(V) 6 7 8 9 RD06HVF1 6 Jul 2010 4/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 Vdd RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TEST CIRCUIT(f=175MHz) Vgg C1 9.1kOHM L6 8.2kOHM C3 100OHM 300pF L1 RF-IN 300pF L2 L3 L4 C2 175MHz RD06HVF1 L5 RF-OUT 82pF 10pF 7 25 30 33 52 55 72 75 92 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 5 70 87 92 5pF 30pF 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm RD06HVF1 6 Jul 2010 5/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175MHz Zout* f=135MHz Zo Zo=50ohm f=175MHz Zin* f=175MH Zo Zin , Zout f (MHz) 175 Zin (ohm) 4.25-j25.6 Zout (ohm) 5.64-j1.05 Conditions Po=10W, Vdd=12.5V,Pin=0.3W RD06HVF1 6 Jul 2010 6/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 RD06HVF1 6 Jul 2010 7/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD06HVF1 6 Jul 2010 8/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD06HVF1 6 Jul 2010 9/9